Hybrid Bulk‐Heterojunction of Colloidal Quantum Dots and Mixed‐Halide Perovskite Nanocrystals for High‐Performance Self‐Powered Broadband Photodetectors

Sulaman, Muhammad; Yang, Shengyi; Bukhtiar, Arfan; Tang, Peiyun; Zhang, Zhenheng; Song, Yong; Imran, Ali; Jiang, Yurong; Cui, Yanyan; Tang, Libin; Zou, B. S.

doi:10.1002/adfm.202201527

Cited by 106 publications

(85 citation statements)

References 40 publications

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“…The relationship between the photocurrent density (J) and irradiation intensity (P) usually obeys the exponential formula of J = A • P θ for a heterojunction photodetector. [51][52][53] In this formula, the parameter of A is a constant for a certain wavelength, and the parameter of θ is an exponential factor. Therefore, by using of the above power law, we also fit the photocurrent-density versus light-intensity curve within logarithmic coordinates as shown in Figure 4d.…”

Section: Resultsmentioning

confidence: 99%

“…Furthermore, the carrier recombination rate induced by the defects/traps will also be enhanced due to the increased thickness of SnSe films. [51][52][53] Besides, the time-dependent photoresponse of the SnSe/Ge heterojunction photodetector has further been investigated under 1064 nm light illumination with intensity of 3.95 W cm −2 , as shown by Figure 5c. Note that the SnSe/Ge photodetector can retain its initial photoresponse performances without observable degradation after storing in air for two months.…”

Section: Resultsmentioning

confidence: 99%

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Ultrasensitive and Self‐Powered SnSe/Ge Heterojunction Photodetector Driven by Spontaneously Interfacial Excitation Transfer of Carriers

Zhang

Liu

et al. 2022

Adv Materials Inter

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To date, the pure-phase SnSe films and nanostructures have been experimentally prepared by means of chemical vapor deposition, mechanical exfoliation, onestep solvothermal method, hot-injection method, and so on. [5][6][7] It was also confirmed that by using of different growth technics or conditions, the SnSe crystals with different phases can be realized. [8][9][10] It turned out that the SnSe crystal with cubic rock-salt structure should belong to the prototypical 3D topological crystalline insulator (TCI) phase. [11][12][13] While, for the SnSe crystal with orthorhombic structure, it was identified as the typical 2D layered semiconductor. Its two adjacent diatomic layers bind together by weak van der Waals interaction, which is similar to other transition-metal-dichalcogenide semiconductors such as MoS 2 and WSe 2 . [14][15][16][17][18] Consequently, benefiting from the existence of Dirac surface state on TCI phase SnSe crystal, it is advantageous to realize the predominated transport of surface carriers with no backscattering and higher mobility. [19][20][21][22] Whereas, for the SnSe crystal with orthorhombic lattice structure, it is favorable for the layer-by-layer growth pattern. This can help to create SnSerelated heterojunctions with sharp interfaces. [23][24][25][26] Significantly, the absence of surface nonsaturated dangling bonds between adjacent two SnSe layers enables to reduce the spontaneous annihilation of photo excitons when used in heterojunction devices. This advantage offers a great opportunity for designing original optoelectronic devices with higher quantum efficiency as well.Note that the layered SnSe film as an absorber layer can achieve a higher optical absorption coefficient of ≈10 5 cm −1 , which is much larger than that of traditional Si or GaAs semiconductors by about two orders of magnitude. [5,[27][28][29][30] Furthermore, the specific band-gap of layered SnSe film was approximately 0.9 eV. This suggests that a thin layer of SnSe film could be sufficient to absorb a wide range of light, and generate a large amount of long-lived photoexcitons. Thus, owing to the excellent characteristics of light absorption and band-gap, the 2D layered SnSe crystalline film has become a suitable semiconductor for photodetection application. Compared to the exotic TCI phase SnSe crystal, the nondissipative surface electron transport with

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Ultrasensitive and Self‐Powered SnSe/Ge Heterojunction Photodetector Driven by Spontaneously Interfacial Excitation Transfer of Carriers

Zhang

Liu

et al. 2022

Adv Materials Inter

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“…have fabricated a CdS/MoS 2 heterostructure-based photodetectors, where the photogenerated electrons get transferred from the CdS to the MoS 2 layer and exhibit better performance than the MoS 2 -based photodetector . A photodetector based on the PbSe QD/halide perovskite bulk heterojunction showed very high photoresponsivity and detectivity due to the surface passivation, and this controls the unfavorable leakage of electrons . Chen et al have designed a highly sensitive photodetector fabricated with metal nanoclusters and a graphene heterojunction.…”

Section: Introductionmentioning

confidence: 99%

“…5 A photodetector based on the PbSe QD/halide perovskite bulk heterojunction showed very high photoresponsivity and detectivity due to the surface passivation, and this controls the unfavorable leakage of electrons. 6 Chen et al have designed a highly sensitive photodetector fabricated with metal nanoclusters and a graphene heterojunction. It exhibited a high photoresponse due to the efficient separation and transportation of charge carriers through the heterojunction.…”

Section: ■ Introductionmentioning

confidence: 99%

2D CdSe/CdS Core–Shell Nanoplatelets for High-Performance Photodetectors

Dutta

Medda

Ghosh

et al. 2022

ACS Appl. Nano Mater.

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Atomically precise two-dimensional (2D) cadmium chalcogenide nanoplatelets (NPLs) have increased interest in optoelectronic applications. In this work, we highlight the influence of the reaction growth time on the structural and photophysical properties, carrier dynamics, and photodetection properties of NPLs. The coexistence of the wurtzite (WZ) and zinc blende (ZB) polymorphs in ∼5:3 ratio is found in CdSe/CdS core/shell (CS) NPLs from the Rietveld analysis of X-ray diffraction (XRD) patterns. The tuning of photoluminescence emission from green to red and 12 times enhancement of the decay time in CdSe/CdS CS NPLs have been achieved by increasing the growth time. Femtosecond transient absorption spectroscopic analysis reveals the increase in rise time from 500 to 900 fs, and the overall bleach recovery dynamics get slower with the growth time. In the CdSe/CdS CS NPLs-based photodetector device, the photo-to-dark current intensity ratio is ∼600 with a fast photoresponse time of ∼100 ms. The maximum photoresponsivity in the visible region is around ∼113 mA/W with a very high detectivity of ∼2.1 × 1013 Jones. Analysis reveals that these solution-processed CdSe/CdS CS NPLs-based photodetectors are promising for next-generation optoelectronic applications.

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“…Perovskite-based tandem photodetectors incorporating an interlayer of PMMA doped with Au nanoparticles have been tested to yield a responsivity of approximately 381 A/W, under an 850 nm illumination intensity of 270 μW/cm 2 and at a biasing voltage of 1 V [ 4 ]. Other broadband IR photodetectors based on the hybrid bulk heterojunction of PbSe colloidal quantum dots and CsPbBr 1.5 I 1.5 mixed-halide perovskite nanocrystals have been fabricated and characterized to yield the optical responsivities of 4.46 and 3.87 A/W, under the 980 and 1550 nm illumination intensities of 0.4 and 0.2 mW/cm 2 at 0 V, respectively [ 5 ]. There has also been an attempt to use p-BP/n-PdSe 2 transition-metal dichalcogenide (TMD) to fabricate a gate-tunable Van der Waals heterostructural photodetector to detect IR radiation with a gate-controlled photoresponsivity of 4.53 × 10 5 and 1.63 × 10 5 A/W, under the irradiation of light of IR wavelengths of 1064 and 1310 nm, respectively [ 6 ].…”

Section: Introductionmentioning

confidence: 99%

Germanium-Tin (GeSn) Metal-Semiconductor-Metal (MSM) Near-Infrared Photodetectors

2022

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Narrow-bandgap germanium–tin (GeSn) is employed to fabricate metal–semiconductor–metal (MSM) near-infrared photodetectors with low-dark currents and high responsivity. To reduce the dark current, the SiO2 layer is inserted in between the metal and semiconductor to increase the barrier height, albeit at the expense of photocurrent reduction. To couple more incident light into the absorption layer to enhance the responsivity, the distributed Bragg reflectors (DBRs) are deposited at the bottom of the GeSn substrate while placing the anti-reflection layer on the surface of the absorption layer. With the interdigital electrode spacing and width, both set at 5 µm and with 1 V bias applied, it is found the responsivities of the generic MSM control sample detector, the MSM with DBR, and the MSM with AR layer are 0.644 A/W, 0.716 A/W, and 1.30 A/W, respectively. The corresponding specific detectivities are 8.77 × 1010, 1.11 × 1011, and 1.77 × 1011 cm·Hz1/2/W, respectively. The measurement data show that these designs effectively enhance the photocurrent and responsivity. At 1 V bias voltage, normalized responsivity evinces that the photodetection range has been extended from 1550 nm to over 2000 nm, covering the entire telecommunication band. Incorporating GeSn as a sensing layer offers one of the new alternative avenues for IR photodetection.

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Hybrid Bulk‐Heterojunction of Colloidal Quantum Dots and Mixed‐Halide Perovskite Nanocrystals for High‐Performance Self‐Powered Broadband Photodetectors

Cited by 106 publications

References 40 publications

Ultrasensitive and Self‐Powered SnSe/Ge Heterojunction Photodetector Driven by Spontaneously Interfacial Excitation Transfer of Carriers

Ultrasensitive and Self‐Powered SnSe/Ge Heterojunction Photodetector Driven by Spontaneously Interfacial Excitation Transfer of Carriers

2D CdSe/CdS Core–Shell Nanoplatelets for High-Performance Photodetectors

Germanium-Tin (GeSn) Metal-Semiconductor-Metal (MSM) Near-Infrared Photodetectors

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