Hybrid Characteristics of MoS₂ Monolayer with Organic Semiconducting Tetracene and Application to Anti-Ambipolar Field Effect Transistor

Abstract

An n-type MoS monolayer grown by chemical vapor deposition method was partially hybridized with an organic semiconducting p-type tetracene thin film. The photoluminescence (PL) intensity in the hybrid region of the MoS/tetracene is clearly lower than that of pristine tetracene because of the charge-transfer effect, which was confirmed by the decrease in exciton lifetimes. Decrease in the temperature led to blue-shift in the PL peak position of MoS layers and, consequently, the PL intensities of both tetracene and MoS considerably increased owing to the decrease in phonon interaction. The PL spectra of bound excitons in the hybrid region were clearly observed at low temperatures, indicating the formation of trap states. The lateral-type n-p heterojunction field-effect transistors (FETs) using the MoS/tetracene hybrid as an active layer showed gate-tunable rectification I- V and anti-ambipolar field-effect characteristics with hysteresis effect. The charge transport characteristics across the n-p heterojunction of the hybrid region of the FET can be explained in terms of the Shockley-Read-Hall trap-intermediated tunneling and Langevin recombination mechanisms. To improve the performance of MoS/tetracene-based FET, a dielectric hexagonal boron nitride (h-BN) thin layer was inserted between the SiO surface and the active MoS layer. We observed the decrease in the hysteresis effect and threshold voltage of the h-BN/MoS/tetracene-based FETs due to the decrease in the number of traps at the interface. The performance of h-BN/MoS/tetracene FET device was also enhanced after the annealing process.

Engineering of TMDC–OSC hybrid interfaces: the thermodynamics of unitary and mixed acene monolayers on MoS2

“…13 In fact, OSC-2DM hybrid systems have already been realized in photovoltaic devices [14][15][16][17] and p-n junctions. 16,[18][19][20][21][22][23] However, while theoretical concept studies focus on highly ordered OSC monolayers or single molecules on 2DMs, 24,25 real hybrid heterosystems are usually restricted to OSC multilayers. This is because, unlike monolayers of 2DMs that are commercially available, the fabrication of true singlelayer hybrid systems remains challenging as it requires highly precise dosing in molecular beam epitaxy.…”

Negative Transconductance Heterojunction Organic Transistors and their Application to Full‐Swing Ternary Circuits

“…Recently, heterojunction transistors (H‐TRs) based on various semiconductor materials have been studied for MVL implementation utilizing their negative differential resistance or transconductance characteristics. The materials for H‐TRs include transition metal dichalcogenides (TMDs), organic semiconductors, graphene, and hybrid material combinations, including carbon nanotube (CNT)‐molybdenum disulfide (MoS 2 ), organic‐MoS 2 , and indium gallium zinc oxide (IGZO)‐CNT …”

High-performance multivalued logic circuits based on optically tunable antiambipolar transistors

“…Antiambipolar transistors (AATs) have received considerable attention in the last few years due to their unique transfer characteristics. [1][2][3][4][5][6][7][8][9] Depending on the material properties and device geometries, AATs can produce ''L'' shaped [1][2][3] or ''N'' shaped [4][5][6] transfer curves with one [1][2][3][4][5][6] or a few [7][8][9] negative differential transconductance (NDT) regions. These noteworthy transport properties enable us to implement multivalued logic circuits (MVLs), which can handle more than two logic states.…”