While high-mobility p-type conjugated polymers have been widely reported, high-mobility n-type conjugated polymers are still rare. In the present work, we designed semifluorinated alkyl side chains and introduced them into naphthalene diimide-based polymers (PNDIF-T2 and PNDIF-TVT). We found that the strong self-organization of these side chains induced a high degree of order in the attached polymer backbones by forming a superstructure composed of "backbone crystals" and "side-chain crystals". This phenomenon was shown to greatly enhance the ordering along the backbone direction, and the resulting polymers thus exhibited unipolar n-channel transport in field-effect transistors with remarkably high electron mobility values of up to 6.50 cm(2) V(-1) s(-1) and with a high on-off current ratio of 10(5).

Multivalued logic (MVL) computing could provide bit density beyond that of Boolean logic. Unlike conventional transistors, heterojunction transistors (H‐TRs) exhibit negative transconductance (NTC) regions. Using the NTC characteristics of H‐TRs, ternary inverters have recently been demonstrated. However, they have shown incomplete inverter characteristics; the output voltage (VOUT) does not fully swing from VDD to GND. A new H‐TR device structure that consists of a dinaphtho[2,3‐b:2′,3′‐f]thieno[3,2‐b]thiophene (DNTT) layer stacked on a PTCDI‐C13 layer is presented. Due to the continuous DNTT layer from source to drain, the proposed device exhibits novel switching behavior: p‐type off/p‐type subthreshold region /NTC/ p‐type on. As a result, it has a very high on/off current ratio (≈105) and exhibits NTC behavior. It is also demonstrated that an array of 36 of these H‐TRs have 100% yield, a uniform on/off current ratio, and uniform NTC characteristics. Furthermore, the proposed ternary inverter exhibits full VDD‐to‐GND swing of VOUT with three distinct logic states. The proposed transistors and inverters exhibit hysteresis‐free operation due to the use of a hydrophobic gate dielectric and encapsulating layers. Based on this, the transient operation of a ternary inverter circuit is demonstrated for the first time.

One-step deposition of bi-functional semiconductor-dielectric layers for organic field-effect transistors (OFETs) is an effective way to simplify the device fabrication. However, the proposed method has rarely been reported in large-area flexible organic electronics. Herein, we demonstrate wafer-scale OFETs by bar coating the semiconducting and insulating polymer blend solution in one-step. The semiconducting polymer poly(3-hexylthiophene) (P3HT) segregates on top of the blend film, whereas dielectric polymethyl methacrylate (PMMA) acts as the bottom layer, which is achieved by a vertical phase separation structure. The morphology of blend film can be controlled by varying the concentration of P3HT and PMMA solutions. The wafer-scale one-step OFETs, with a continuous ultrathin P3HT film of 2.7 nm, exhibit high electrical reproducibility and uniformity. The one-step OFETs extend to substrate-free arrays that can be attached everywhere on varying substrates. In addition, because of the well-ordered molecular arrangement, the moderate charge transport pathway is formed, which resulted in stable OFETs under various organic solvent vapors and lights of different wavelengths. The results demonstrate that the one-step OFETs have promising potential in the field of large-area organic wearable electronics.

Precise control of the microstructure in organic semiconductors (OSCs) is essential for developing high‐performance organic electronic devices. Here, a comprehensive charge transport characterization of two recently reported rigid‐rod conjugated polymers that do not contain single bonds in the main chain is reported. It is demonstrated that the molecular design of the polymer makes it possible to achieve an extended linear backbone structure, which can be directly visualized by high‐resolution scanning tunneling microscopy (STM). The rigid structure of the polymers allows the formation of thin films with uniaxially aligned polymer chains by using a simple one‐step solution‐shear/bar coating technique. These aligned films show a high optical anisotropy with a dichroic ratio of up to a factor of 6. Transport measurements performed using top‐gate bottom‐contact field‐effect transistors exhibit a high saturation electron mobility of 0.2 cm2 V−1 s−1 along the alignment direction, which is more than six times higher than the value reported in the previous work. This work demonstrates that this new class of polymers is able to achieve mobility values comparable to state‐of‐the‐art n‐type polymers and identifies an effective processing strategy for this class of rigid‐rod polymer system to optimize their charge transport properties.

Application‐oriented patterned growth of organic semiconductor (OSC) thin films with single crystalline domains is crucial for fabricating sophisticated high‐performance organic‐electronic and optoelectronic devices; however, fabricating these patterned nanometer‐thick crystals in a simple, fast, and effective manner is a difficult task with a roll‐to‐roll printing process. Here, a simple bar‐coating approach to form an array of single‐crystal‐like OSC thin‐film patterns at a rate of a few millimeters per second is introduced. To this end, the processing parameters of a gap‐controlled bar‐coating method is optimized, including coating speed, crystal nucleation, and solution fluidics, which allow a high degree of morphological control of bar‐coated OSC films in an area of several centimeters. In particular, it is demonstrated that the solutal‐Marangoni flow induced by a suitable solvent additive can considerably improve molecular mass transport and induce favorable vertical phase separation. Thus, organic transistors based on the OSC patterns fabricated with the additive‐assisted bar coating show a field‐effect mobility of up to 20 cm2 V−1 s−1 and superior operational stability. The proposed bar coating method will facilitate an industry‐level application of organic electronics.