Hybrid device based on GaN nanoneedles and MEH-PPV/PEDOT:PSS polymer

Shin, Min Jeong; Gwon, Dong-Oh; Lee, Chanmi; Lee, Gang Seok; Jeon, Injun; Ahn, Hyung Soo; Yi, Sam Nyung; Ha, Dong-Woo

doi:10.1016/j.materresbull.2015.03.057

Cited by 10 publications

(13 citation statements)

References 37 publications

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“…The hybrid device that combines the properties of organic/inorganic semiconductors was fabricated and reported by Shin et al [139]. The device incorporated poly [2-methoxy-5-2-ethylhexyloxy-1,4-henylenevinylene] (MEH-PPV) and poly 3,4-ethylenedioxythiophene: poly styrene sulfonate (PEDOT: PSS) as some organic polymers and GaN nanoneedles as an inorganic semiconductor [139]. The layers of the two polymers were spin coated onto the GaN nanoneedles [139].…”

Section: Gan Based Devicesmentioning

confidence: 99%

“…The device incorporated poly [2-methoxy-5-2-ethylhexyloxy-1,4-henylenevinylene] (MEH-PPV) and poly 3,4-ethylenedioxythiophene: poly styrene sulfonate (PEDOT: PSS) as some organic polymers and GaN nanoneedles as an inorganic semiconductor [139]. The layers of the two polymers were spin coated onto the GaN nanoneedles [139]. The one peak in the EL originated from the MEH-PPV layer owing to the different potential barriers of electrons and holes at its interface with the GaN nanoneedles [139].…”

Section: Gan Based Devicesmentioning

confidence: 99%

“…The layers of the two polymers were spin coated onto the GaN nanoneedles [139]. The one peak in the EL originated from the MEH-PPV layer owing to the different potential barriers of electrons and holes at its interface with the GaN nanoneedles [139]. However, the PL spectrum showed peaks due to both GaN nanoneedles and MEH-PPV [139].…”

Section: Gan Based Devicesmentioning

confidence: 99%

“…The one peak in the EL originated from the MEH-PPV layer owing to the different potential barriers of electrons and holes at its interface with the GaN nanoneedles [139]. However, the PL spectrum showed peaks due to both GaN nanoneedles and MEH-PPV [139]. Such hybrid structures, suitably developed, might be able to improve the efficiency of optoelectronic devices [139].…”

Section: Gan Based Devicesmentioning

confidence: 99%

“…However, the PL spectrum showed peaks due to both GaN nanoneedles and MEH-PPV [139]. Such hybrid structures, suitably developed, might be able to improve the efficiency of optoelectronic devices [139]. Figure 37 shows the FESEM images of MEH-PPV layer on GAN nanoneedles.…”

Section: Gan Based Devicesmentioning

confidence: 99%

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Review of GaN/ZnO Hybrid Structures Based Materials and Devices

Nahhas¹

2018

NANO

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This paper presents a review of recent advances of Gallium Nitride (GaN) and Zinc Oxide (ZnO) based hybrid structures materials and devices. GaN and ZnO have gained substantial interest in the research area of wide bandgap semiconductors due to their unique electrical, optical and structural properties. GaN and ZnO are important semiconductor materials with applications in blue and ultraviolet (UV) optoelectronics. Both materials have similar physical properties. GaN and ZnO as hybrid material have received much attention due to their unique potential applications. Several potential optical applications are being fabricated based on GaN and ZnO hybrid materials such as optical wave guide, light emitting diodes (LEDs), and laser diodes (LDs). The recent aspects of GaN and ZnO hybrid based devices are presented and discussed.

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Section: Gan Based Devicesmentioning

confidence: 99%

Section: Gan Based Devicesmentioning

confidence: 99%

Section: Gan Based Devicesmentioning

confidence: 99%

Section: Gan Based Devicesmentioning

confidence: 99%

Section: Gan Based Devicesmentioning

confidence: 99%

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Review of GaN/ZnO Hybrid Structures Based Materials and Devices

Nahhas¹

2018

NANO

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Electrical properties of nitric acid and DMSO treated PEDOT:PSS/n‐Si hybrid heterostructures for optoelectronic applications

Anitha

Menon²,

Bhalerao³

et al. 2020

J of Applied Polymer Sci

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Organic/inorganic heterostructures are an emerging and interesting field of research for optoelectronics. In this work, an efficient organic/inorganic hybrid heterojunction between PEDOT:PSS and n-type Silicon has been fabricated for optoelectronic applications. Samples with varying thickness of PEDOT:PSS were prepared by spin coating technique and the electrical conductivity of organic layers was modified using DMSO as additive. Post fabrication, the hybrid heterostructures were treated with HNO 3 vapor so as to enhance the conductivity of the organic layer. Surface treatment with HNO 3 was found to lower the roughness of the organic layer and enhance the transparency of the layer. I-V characteristics reveal optimized behavior of HNO 3 treated PEDOT:PSS layer with a low Ideality factor (n~3.2) and a barrier height (Φ B ) of 0.8 eV. The findings of the study provide a promising efficient method to enhance the electrical and device properties of PEDOT:PSS/n-Si heterostructures for optoelectronic applications.

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Optical and Structural Analysis of GaN Microneedle Crystals Obtained via GaAs Substrates Decomposition and their Possible Growth Model Using the Volmer–Weber Mechanism

Gastellóu

Garcı́a

Herrera

et al. 2022

Physica Status Solidi (b)

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GaN microneedle crystals are grown via GaAs substrates decomposition, using ultrahigh‐pure anhydrous ammonia as nitrogen precursor at 900 °C for 4 min. The X‐ray diffraction pattern shows the possible cubic and hexagonal coexistence of phases for the GaN highest intensity peak. Scanning electron microscopy presents a seaflower‐type growth for GaN microneedles, which can be related to factors such as lattice mismatch and substrate roughness due to the cleaning process. On the other hand, energy‐dispersive spectroscopy and X‐ray photoelectron spectroscopy characterizations demonstrate the elemental contributions of gallium and nitrogen for the GaN microneedle. Transmission electron microscopy shows uniform growth with an interplanar spacing of 2.76 Å. In addition, a possible growth model by hexagonal crystals stacking is proposed for obtaining GaN microneedles using the mechanism of Volmer–Weber growth. Photoluminescence spectrum presents an energy emission peak in the ultraviolet band with a value of 3.40 eV (364 nm), which is related to the band‐to‐band transition, and Raman scattering shows stress in the GaN microneedles due to the presence of different vibration modes for hexagonal GaN, indicating that several microneedles break.

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Hybrid device based on GaN nanoneedles and MEH-PPV/PEDOT:PSS polymer

Cited by 10 publications

References 37 publications

Review of GaN/ZnO Hybrid Structures Based Materials and Devices

Review of GaN/ZnO Hybrid Structures Based Materials and Devices

Electrical properties of nitric acid and DMSO treated PEDOT:PSS/n‐Si hybrid heterostructures for optoelectronic applications

Optical and Structural Analysis of GaN Microneedle Crystals Obtained via GaAs Substrates Decomposition and their Possible Growth Model Using the Volmer–Weber Mechanism

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