Review of GaN/ZnO Hybrid Structures Based Materials and Devices

Nahhas, Ahmed M.

doi:10.11648/j.nano.20180602.11

Cited by 7 publications

(4 citation statements)

References 130 publications

(262 reference statements)

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“…The GaN/AlN heterostructure is used for high power applications [33]. Nahhas et al reported that, the formation of ZnO/GaN hybrid devices was highly flexible with superior electrical and optical properties as compared to the ZnO and GaN [34]. The improved photocatalytic performance of hybrid ZnO/GaN due to high charge carrier concentration and interlayer conductivity between ZnO and GaN thinfilm as compared to the host systems [34].…”

Section: Introductionmentioning

confidence: 99%

“…Nahhas et al reported that, the formation of ZnO/GaN hybrid devices was highly flexible with superior electrical and optical properties as compared to the ZnO and GaN [34]. The improved photocatalytic performance of hybrid ZnO/GaN due to high charge carrier concentration and interlayer conductivity between ZnO and GaN thinfilm as compared to the host systems [34]. ZnO is perfectly grown on GaN using molecular beam epitaxy, metal-organic chemical vapour deposition, magnetron sputtering, pulse laser deposition, etc [35,36].…”

Section: Introductionmentioning

confidence: 99%

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Electronic, transport and optical properties of ZnO/GaN heterostructures: first-principles study

Wakhare¹,

Deshpande²

2023

J. Phys. D: Appl. Phys.

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The electronic, transport, and optical properties of the trilayer of ZnO and GaN heterostructures are investigated using density functional study to understand its role in optoelectronic devices. For layered systems, the Zn over N and Ga over O stacking arrangement of ZnO over GaN is most favorable. The calculated formation energies reﬂect the energetically favorable ZnO/GaN heterostructures. The GaN/ZnO/GaN is a more energetically favorable stacking arrangement as compared to ZnO/GaN/ZnO. The band gap of trilayer systems decreases as compared to that of bilayer and monolayer. The ZnO/GaN bilayer and ZnO/GaN/ZnO trilayer show direct band gap characteristics with the value of 1.71 and 1.61 eV, respectively. The GaN/ZnO/GaN shows an indirect band gap of 1.47 eV. The higher recombination rate of ZnO/GaN/ZnO is useful to develop a base for optical emission devices. The transport calculations show that the magnitude of current ﬂowing through the system increases with the layers of heterosystems and is speciﬁcally higher for GaN/ZnO/GaN heterostructure. The enhanced channel conductance and higher mobility of GaN/ZnO/GaN heterostructure are crucial for the development of high mobility transistors. The improved absorption energy and dielectric properties are observed for trilayer systems as compared to that of the bilayer and monolayer and may be useful for optical devices. The higher optical eﬃciency is observed for GaN/ZnO/GaN as compared to ZnO/GaN/ZnO heterostructure system and opens up a way toward optical waveguides and reﬂectors.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Electronic, transport and optical properties of ZnO/GaN heterostructures: first-principles study

Wakhare¹,

Deshpande²

2023

J. Phys. D: Appl. Phys.

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“…In addition, the visible region of a ZnO thin film used as a solar window has a high optical transmittance [9]. Moreover, ZnO has band gap energy and optical properties identical to GaN materials, which is good for fabricating optical devices such as laser diodes (LDs) [10].…”

Section: Introductionmentioning

confidence: 99%

Effect of Annealing on the Structural and Optical Properties of ZnO/ITO and AZO/ITO Thin Films Prepared by Sol-Gel Spin Coating

et al. 2022

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This paper aims to investigate the effect of annealing on the structural and optical properties of ZnO/ITO and AZO/ITO thin films. In the preparation of ZnO and AZO films, zinc acetate dehydrate (Zn(CH3COO)2.2H2O), ethanol, diethanolamine (DEA), and AlCl3 were used as a starting material, solvent, stabilizer, and dopant sources, respectively. Both ZnO and AZO films were fabricated on ITO (indium tin oxide) substrates using the spin coating technique at room temperature with a rotating speed of 3,000 rpm in 30 s. The films were heated at various temperatures in the temperature range of 400 - 600 °C for 60 min. The crystallite size of the film is calculated using Debye-Scherrer and Williamson-Hall Methods. Based on the UDM results, the crystallite size of ZnO/ITO and AZO/ITO films increases after annealing in comparison with the films before annealing. From the optical UV-Vis measurements, there was an increase in the transmittance value of the samples after annealing. The transmittance value of ZnO/ITO and AZO/ITO films increases from 40 % before annealing to approximately 80 and 90 %, respectively after annealing. The increase in the transmittance valued in both ZnO/ITO and AZO/ITO after annealing is mainly due to an improvement in the crystalline phase of these films. The band gap energy of ZnO and AZO films is reduced with increasing annealing temperatures, from 3.26 eV before annealing to 3.19 eV for ZnO and 3.23 eV for AZO films after annealing at 600 °C. HIGHLIGHTS The sol-gel spin coating method was used to study the effect of annealing on the structural and optical properties of ZnO/ITO and AZO/ITO films The transmittance valued in both ZnO/ITO and AZO/ITO after annealing increase as a result of an improvement in the crystalline phase of these films Reducing the amorphous phase and the increase of the crystallite size of the films are the main reason for narrowing the band gap energy of the ZnO/ITO and AZO/ITO films

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“…The percentage of GaN-based devices on the market has grown monotonically during recent years demonstrating interest in the upcoming technologies 7 . The list of promising GaN-based applications includes: power transistors [2], LEDs [3,4] and microwave integrated circuits, while GaN photodiodes are already commercially available (Roithner Lasertechnik GmbH).…”

Section: Introductionmentioning

confidence: 99%

Hydrogen passivation of the n-GaN nanowire/p-Si heterointerface

et al. 2020

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The influence of hydrogen plasma treatment on the electrical and optical properties of vertical GaN nanowire (NW)/Si heterostructures synthesized via plasma assisted molecular beam epitaxy is studied. The effect of the treatment is thoroughly studied via variation of the passivation duration. Photoluminescence investigation demonstrates that the passivation affects the doping of the GaN NWs. The samples were processed as photodiodes with a top transparent electrode to obtain detailed information about the n-GaN NWs/p-Si heterointerface under illumination. The electron beam induced current measurements demonstrated the absence of potential barriers between the active parts of the diode and the contacts, indicating ohmic behavior of the latter. I-V characteristics obtained in the dark and under illumination show that hydrogen can effectively passivate the recombination centers at the GaN NWs/Si heterointerface. The optimum passivation duration, providing improved electrical properties, is found to be 10 min within the studied passivation regimes. It is demonstrated that longer treatment causes degradation of the electrical properties. The discovered phenomenon is discussed in detail.

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Review of GaN/ZnO Hybrid Structures Based Materials and Devices

Cited by 7 publications

References 130 publications

Electronic, transport and optical properties of ZnO/GaN heterostructures: first-principles study

Electronic, transport and optical properties of ZnO/GaN heterostructures: first-principles study

Effect of Annealing on the Structural and Optical Properties of ZnO/ITO and AZO/ITO Thin Films Prepared by Sol-Gel Spin Coating

Hydrogen passivation of the n-GaN nanowire/p-Si heterointerface

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