Articles you may be interested inHigh-κ TiO2 thin film prepared by sol-gel spin-coating method AIP Conf. Proc. 1665, 080015 (2015); 10.1063/1.4917919 Effect of Fe incorporation on the optical behavior of ZnO thin films prepared by sol-gel derived spin coating techniques AIP Conf.Abstract. Nanocrystalline ZnO films doped with aluminium by sol-gel spin coating method have been investigated using optical transmittance UV-Vis and X-ray diffraction (X-RD) measurements. ZnO films were prepared using zinc acetate dehydrate (Zn(CH 3 COO) 2 .2H 2 O), ethanol, and diethanolamine (DEA) as a starting material, solvent, and stabilizer, respectively. For doped films, AlCl 3 was added to the mixture. The ZnO:Al films were deposited on a transparent conductive oxide (TCO) substrate using spin coating tecnique at room temperature with a rate of 3000 rpm in 30 sec. The deposited films were annealed at various temperatures from 400 o C to 600 o C during 60 minutes. The transmittance UV-Vis measurement results showed that after annealing at 400 o C, the energy band gap profile of nanocrystalline ZnO:Al film was a blue shift. This indicated that the band gap of ZnO:Al increased after annealing due to the increase of crystalline size. As the annealing temperature increased the bandgap energy was a constant. In addition to this, there was a small oscillation occuring after annealing compared to the as-grown samples. In the case of X-RD measurements, the crystalinity of the films were amorphous before annealing, and after annealing the crystalinity became enhance. Also, X-RD results showed that structure of nanocrystalline ZnO:Al films were hexagonal polycrystalline with lattice parameters are a = 3.290 Å and c = 5.2531 Å.

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Laplace equation on irregular domain has been solved by finite difference method. The program for calculating distribution of electric potential inside has been developed. Symmetrical Dirichlet boundary condition and Cartesius Coordinates are applied. A trapezoid and a quarter of a circle are chosen as irregular domain example. The contour of electric potential shows symmetrical result to its domain. The convergence and stability output program shows a good result.

This paper aims to investigate the effect of annealing on the structural and optical properties of ZnO/ITO and AZO/ITO thin films. In the preparation of ZnO and AZO films, zinc acetate dehydrate (Zn(CH3COO)2.2H2O), ethanol, diethanolamine (DEA), and AlCl3 were used as a starting material, solvent, stabilizer, and dopant sources, respectively. Both ZnO and AZO films were fabricated on ITO (indium tin oxide) substrates using the spin coating technique at room temperature with a rotating speed of 3,000 rpm in 30 s. The films were heated at various temperatures in the temperature range of 400 - 600 °C for 60 min. The crystallite size of the film is calculated using Debye-Scherrer and Williamson-Hall Methods. Based on the UDM results, the crystallite size of ZnO/ITO and AZO/ITO films increases after annealing in comparison with the films before annealing.  From the optical UV-Vis measurements, there was an increase in the transmittance value of the samples after annealing. The transmittance value of ZnO/ITO and AZO/ITO films increases from 40 % before annealing to approximately 80 and 90 %, respectively after annealing. The increase in the transmittance valued in both ZnO/ITO and AZO/ITO after annealing is mainly due to an improvement in the crystalline phase of these films. The band gap energy of ZnO and AZO films is reduced with increasing annealing temperatures, from 3.26 eV before annealing to 3.19 eV for ZnO and 3.23 eV for AZO films after annealing at 600 °C. HIGHLIGHTS The sol-gel spin coating method was used to study the effect of annealing on the structural and optical properties of ZnO/ITO and AZO/ITO films The transmittance valued in both ZnO/ITO and AZO/ITO after annealing increase as a result of an improvement in the crystalline phase of these films Reducing the amorphous phase and the increase of the crystallite size of the films are the main reason for narrowing the band gap energy of the ZnO/ITO and AZO/ITO films

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