Hybrid Device of Blue GaN Light-Emitting Diodes and Organic Light-Emitting Diodes with Color Tunability for Smart Lighting Sources

Abstract

A lighting device with a wide color-tunable range is still a challenge for lighting based on either organic light-emitting diodes (OLEDs) or inorganic LEDs. In this work, we first proposed a novel hybrid device of organic LEDs and inorganic blue GaN LEDs to achieve full white and other colors. Organic LEDs were stacked with green and red emissive layers and connected with blue GaN LEDs in parallel but in opposite polarity voltage. Under the alternate-current (AC) driving, the hybrid structure can be controlled independently by applying timing variable opposite voltages to emit the light from either blue LEDs or the stacked OLEDs for forming mixed colors. The hybrid device can generate white light, varying in a wide range by changing the amplitude and duty ratio (DR) of AC-driving signals, from cold white to standard white and to warm white (3668–11 833 K). When an AC voltage of (4.80 V, −2.45 V) was applied, the device has a high color gamut of 95.24% National Television System Committee (NTSC) and a high color rendering index (R a) of 92.4%. The novel hybrid device with the blue LED and OLED in opposite polarity exhibits potential applications in smart solid-state lighting, display, and light communication.

Enhanced Excitonic Nature of MAPbBr3 Nanocrystals in Nanoporous GaN

“…[1][2][3][4] With the development in the porosification of epitaxial GaN via dopingselective electrochemical etching, [5,6] porous GaN offers an opportunity to produce composite materials through the infiltration of pores and thus broaden its application in numerous electronic and optoelectronic devices, [7][8][9][10][11][12] including color-DOI: 10.1002/adom.202400221 converting micro-light emitting diodes (Micro-LEDs). [13][14][15][16][17][18] GaN-based blue micro-LEDs combined with red and green light converters, such as organic semiconductors [13][14][15] and inorganic quantum dots, [16][17][18] have been fabricated and show promise for full-color displays. However, the 𝜋conjugated organic light converters often suffer from broad emission spectra.…”

“…However, the 𝜋conjugated organic light converters often suffer from broad emission spectra. [13][14][15] Therefore, they cannot satisfy demands for spectrally purest color conversion required to get the purest color gamut. Meanwhile, the preparation process of inorganic quantum dot light converters is complex and expensive.…”

Deposition Mechanism and Properties of Plasma-Enhanced Atomic Layer Deposited Gallium Nitride Films with Different Substrate Temperatures

“…Gallium nitride (GaN), as a Group III nitride semiconductor material, has been widely used for optoelectronic device applications, such as light emitting diodes [ 1 , 2 , 3 ], high electron mobility transistors [ 4 , 5 ], semiconductor lasers [ 6 , 7 ], solar cells [ 8 , 9 ], and ultraviolet detectors [ 10 , 11 ], due to its advantages of wide direct band gap, high carrier concentration, high breakdown field strength, and excellent chemical durability [ 12 ]. GaN thin films can be grown using pulsed laser deposition [ 13 , 14 ], magnetron sputter epitaxy [ 15 , 16 ], molecular beam epitaxy [ 17 , 18 ], metal-organic chemical vapor deposition [ 19 , 20 ], and atomic layer deposition (ALD) [ 21 , 22 ].…”