Hybrid E-beam lithography and process improvement for nanodevice fabrication

Servin, Isabelle; Laulagnet, F.; Cannac, Maxime; Gharbi, Ahmed; Dallery, Jacques-Alexandre

doi:10.1117/12.2572868

Cited by 3 publications

(2 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The aim of hybrid lithography is to combine the versatility and the high-resolution of E-Beam lithography with the highthroughput of optical lithography (4) . It is the combination of these two distinct lithography exposure steps into on a single photoresist film.…”

Section: Hybrid Lithography Conceptmentioning

confidence: 99%

E-beam direct write lithography: the versatile ally of optical lithography

Laulagnet¹,

Dallery²,

Pain³

et al. 2023

Novel Patterning Technologies 2023

View full text Add to dashboard Cite

Electron Beam Direct Write (EBDW or E-Beam) Lithography is a worldwide reference technology used in laboratories, universities and pilot line facilities for Research and Developments. Due to its low writing speed, E-Beam direct write has never been recognized as an acceptable industrial solution, exception made for optical mask manufacturing. Nevertheless, its natural high-resolution capability allows low-cost patterning of advanced or innovative devices ahead of their high-volume manufacturing ramp-up.Thanks to its full versatility with almost all type of chemically amplified resists, EBDW is a perfect complementary solution to optical lithography. This paper demonstrates the compatibility of EBDW lithography with advanced Negative Tone Development (NTD) resist and the possibility to set-up an hybrid E-Beam/193i lithography process flow with high performances in terms of resolution and mix & match overlay. This high-end lithography strategy alliance offers flexibility and cost advantages for device development R&D but also powerful possibilities for specific applications such circuit encryption as discussed at the end of this work-study.

show abstract

Section: Hybrid Lithography Conceptmentioning

confidence: 99%

E-beam direct write lithography: the versatile ally of optical lithography

Laulagnet¹,

Dallery²,

Pain³

et al. 2023

Novel Patterning Technologies 2023

View full text Add to dashboard Cite

show abstract

“…The aim of hybrid lithography is to combine the versatility and the high-resolution of E-beam lithography with the high-throughput of optical lithography. 3 This study combines these two distinct lithography exposure steps into on a single photoresist film. One of the challenges is to find a resist compatible for both exposure modes.…”

Section: Hybrid Lithography Conceptmentioning

confidence: 99%

Electron beam direct write lithography: the versatile ally of optical lithography

Laulagnet

Dallery

Pain

et al. 2023

J. Micro/Nanopattern. Mats. Metro.

View full text Add to dashboard Cite

.Electron beam (E-beam) direct write (EBDW) lithography is a worldwide reference technology used in laboratories, universities, and pilot line facilities for research and development. Due to its low writing speed, EBDW has never been recognized as an acceptable industrial solution, except for optical mask manufacturing. Nevertheless, its natural high-resolution capability allows for low-cost patterning of advanced or innovative devices prior to their high-volume manufacturing ramp-up. Due to its full versatility with almost all types of chemically amplified resists, EBDW is a perfect complementary solution to optical lithography. We demonstrate the compatibility of EBDW lithography with advanced negative tone development resists and the possibility of setting up a hybrid E-beam/193i lithography process flow with high performance in terms of resolution and mix and match overlay. This high-end lithography alliance offers flexibility and cost advantages for device development research and development, as well as powerful possibilities for specific applications such as circuit encryption, as discussed at the end of our study.

show abstract

Laser irradiation effects in FeRh thin film

Merkel

Sájerman

Lenk

et al. 2023

Mater. Res. Express

View full text Add to dashboard Cite

The effect of laser irradiation in the energy range from 20 mW to 200 mW was investigated in 109 nm thick Fe51Rh49 film deposited on an MgO (100) substrate. The initial, A1 structure with fully paramagnetic magnetic ordering was achieved after irradiating the samples with 120 keV Ne+ ions with a fluence of 1 × 1016 ion/cm2, as it was confirmed by conversion-electron Mössbauer spectroscopy. At higher powers physical damage of the layer was observed, while in the lowest power case, magnetic force microscopy revealed a well-defined magnetic structure reflecting the laser irradiation pattern. The presented results have the potential to be employed for laser ablation or allows the fabrication of arbitrary ferromagnetic pattern within a homogeneous paramagnetic FeRh thin films.

show abstract

Hybrid E-beam lithography and process improvement for nanodevice fabrication

Cited by 3 publications

References 0 publications

E-beam direct write lithography: the versatile ally of optical lithography

E-beam direct write lithography: the versatile ally of optical lithography

Electron beam direct write lithography: the versatile ally of optical lithography

Laser irradiation effects in FeRh thin film

Contact Info

Product

Resources

About