Hybrid integration of Fabry–Pérot cavity with waveguide photodetector on silicon substrate

Influence of Temperature and Illumination on the Electrical Characteristics of Nanocrystalline Cu2S Based Heterojunctions for Photodetector Application

“…Figure 10 shows the photocurrent as a function of the wavelength, where the incident light was monochromized by the monochromator and the photocurrent was measured using a 617 electrometer. The particular feature of the photodetector detector is the presence of surface band bending, which allows this device to work without any applied voltage [23]. Illumination of the photodetector structure at a wavelength range of 400800 nm under reverse bias of −1 V led to the spectral response curves shown in Fig.…”