Hybrid integration of semiconductor lasers with Si-based single-mode ridge waveguides

Fabrication of electrically pumped InAs/GaAs quantum dot lasers on Si substrates by Au‐mediated wafer bonding

“…The highly-conductive GaAs/Si heterointerface enabled vertical carrier injection, which prevents carrier spreading toward laser stripe edges seen for lateral carrier injection and makes fabrication process much simpler. We have fabricated 100's of lasers in one wafer bonding step, demonstrating the advantage of this approach for high volume, low cost integration over the conventional pick-and-place scheme [7]. InAs/GaAs QD growth on GaAs substrates by MOCVD we adopted in this study gives further merits for large-scale, low-cost, highthroughput fabrication over those using InP substrates or MBE growth.…”

Heterogeneous integration towards an ultra-compact and thin optical displacement microsensor

“…The passive alignment technique, which eliminates complicated precise optical axis alignment and removes the need for closed-loop optimization, can solve this problem. Three types of passive alignment techniques have already been developed: mechanical contact alignment [10], visual index alignment using alignment marks [11][12][13], and solder bump self-alignment [14]. We adopted index alignment using alignment marks.…”

Semiconductor Optical Sensors

“…Using an alignment ridge formed adjacent to the laser ridge, and a corresponding alignment slot on the waveguide substrate as shown in Figure 1.3, total losses due to the gap and misalignment have been shown to be < 8 dB [43]. A more complex set of cleaved and etched alignment features on the laser [44], using an AuSn solder for mounting, has resulted in excess loss of < 6 dB. The concept can be extended to laser/waveguide arrays: coupling of four lasers to single-mode waveguides using a ridge/slot approach has been demonstrated with < 6.5 dB excess loss and ± 0.5 dB variation between devices [45].…”