Hybrid magnetic/semiconductor spintronic materials and devices

Xu, Yongbing; Ahmad, Ejaz; Claydon, J. S.; Lu, Yujie; Hassan, Sameh; Will, Iain; Cantor, B.

doi:10.1016/j.jmmm.2006.02.004

Cited by 19 publications

(4 citation statements)

References 33 publications

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“…Half-metallic Fe 3 O 4 is of great current interest as a RT spin injector due to its predicted half-metallicity, 8 strong measured spin polarization approaching 100% at E F , 9 and high T C of 858 K, well in excess of RT. To date, epitaxial growth of Fe 3 O 4 films on a variety of conventional semiconductors, such as GaAs, 10,11 InAs, 12 and Si, 13 has been achieved, whereas possible growth on wide bandgap semiconductors, such as GaN, a technologically important material for fabrication of optoelectronic devices, 14,15 and high power transistors, 16 remains essentially unexplored. Recent GaN-based spin relaxation measurements yield spin lifetimes of ϳ20 ns at 5 K. 17 Theoretical calculations predicted that the spin lifetime in pure GaN is about three orders of magnitude larger than in GaAs for all temperatures.…”

Section: Introductionmentioning

confidence: 99%

UltrathinFe3O4epitaxial films on wide bandgap GaN(0001)

et al. 2010

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Ultrathin films of magnetite ͑Fe 3 O 4 ͒ have been grown epitaxially on wurtzite wide bandgap semiconductor GaN͑0001͒ surfaces using molecular-beam epitaxy. Reflection high-energy electron-diffraction patterns show a ͑111͒ orientation of the Fe 3 O 4 films and in-plane epitaxial relationship of ͗110͘ Fe 3 O 4 ʈ ͗1120͘ GaN and ͗112͘ Fe 3 O 4 ʈ ͗1100͘ GaN with the GaN͑0001͒. X-ray photoelectron spectroscopy and x-ray magnetic circular dichroism confirm the growth of stoichiometric Fe 3 O 4 , instead of ␥ -Fe 2 O 3 . The magnetic hysteresis loops and saturation magnetization M s obtained by superconducting quantum interference device at room temperature show fast saturation of the Fe 3 O 4 films with the magnetization close to that of the bulk single-crystal value. In-plane magnetoresistance ͑MR͒ measurements reveal negligibly small MR effects, further indicating that the films are free from antiphase boundaries.

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Section: Introductionmentioning

confidence: 99%

UltrathinFe3O4epitaxial films on wide bandgap GaN(0001)

et al. 2010

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“…The electrical conductivity of this material at room temperature is reportedly the result of hopping of the charge carriers between the Fe 2+ and Fe 3+ ions in the octahedral sites. , As the temperature drops below 120 K, a metal to insulator transition known as the Verwey transition occurs . This charge-ordered insulator has a magnetoelectronic effect, becoming ferroelectric below this Verwey temperature. − These properties make magnetite a potential candidate for applications in magnetic memory, magnetoreceptors, and spin-dependent transport devices. − …”

Section: Introductionmentioning

confidence: 99%

Electrodeposition of Epitaxial Magnetite Films and Ferrihydrite Nanoribbons on Single-Crystal Gold

et al. 2009

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Magnetite (Fe3O4), ferrihydrite (Fe10O14(OH)2), and iron (Fe) films were electrodeposited by cathodic deposition from an alkaline Fe(III)−triethanolamine solution. The electrodeposited phase depended on the applied potential. Magnetite films were electrodeposited from −1.01 to −1.10 V vs Ag/AgCl, whereas ferrihydrite films were deposited from −1.10 to −1.20 V vs Ag/AgCl. Iron deposition occurred at more negative potentials. The polycrystalline films were characterized using X-ray diffraction, scanning electron microscopy, and Mössbauer spectroscopy. Epitaxial magnetite films on low-index gold crystals were produced at three different potentials. X-ray diffraction analysis of the magnetite films deposited at −1.01, −1.05, and −1.10 V vs Ag/AgCl showed [111] oriented films on Au(111) and Au(001). Because of twinning of the {111} planes, the [511] orientation was present in thicker films. Magnetite grew with a [110] orientation on Au(110). At the more negative potentials of −1.10 and −1.20 V vs Ag/AgCl, ferrihydrite deposited with an (112̅0) orientation.

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“…Liquid precursor MOCVD using TIP, Co(TMHD) 3 , and THF combined in the manner previously described is a viable way to produce ferromagnetic …”

Section: Discussionmentioning

confidence: 99%

“…One such concept is the exploitation of the spin of the electron, in addition to its charge, to create a new class of spin transport electronic (spintronic) devices whose impact in the world of microelectronics is already being felt [1,2]. Dilute magnetic semiconductors (DMS), a functional material that is magnetized by introducing local magnetic moments into the host, offer the advantages of the spin degree of freedom and compatibility with existing semiconductor technologies [3].…”

Section: Introductionmentioning

confidence: 99%

Characteristics of CoxTi1−xO2 thin films deposited by metal organic chemical vapor deposition

McClure

Kayani

Idzerda

et al. 2008

Journal of Applied Physics

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This paper deals with the growth and characterization of ferromagnetic cobalt doped TiO 2 thin films deposited by liquid precursor metal organic chemical vapor deposition (MOCVD) using a new combination of the source materials Co(TMHD) 3 , tetrahydrofuran (THF), and titanium isopropoxide (TIP).An array of experiments reveals the intrinsic ferromagnetic nature of the grown films, and suggests that the magnetism is not generated by oxygen vacancies.

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Hybrid magnetic/semiconductor spintronic materials and devices

Cited by 19 publications

References 33 publications

UltrathinFe3O4epitaxial films on wide bandgap GaN(0001)

UltrathinFe3O4epitaxial films on wide bandgap GaN(0001)

Electrodeposition of Epitaxial Magnetite Films and Ferrihydrite Nanoribbons on Single-Crystal Gold

Characteristics of CoxTi1−xO2 thin films deposited by metal organic chemical vapor deposition

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