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The Landau-Lifshitz equation reliably describes magnetization dynamics using a phenomenological treatment of damping. This Letter presents first-principles calculations of the damping parameters for Fe, Co, and Ni that quantitatively agree with existing ferromagnetic resonance measurements. This agreement establishes the dominant damping mechanism for these systems and takes a significant step toward predicting and tailoring the damping constants of new materials.

Doped EuO is an attractive material for the fabrication of proof-of-concept spintronic devices. Yet for decades its use has been hindered by its instability in air and the difficulty of preparing and patterning high-quality thin films. Here, we establish EuO as the pre-eminent material for the direct integration of a carrier-concentration-matched half-metal with the long-spin-lifetime semiconductors silicon and GaN, using methods that transcend these difficulties. Andreev reflection measurements reveal that the spin polarization in doped epitaxial EuO films exceeds 90%, demonstrating that EuO is a half-metal even when highly doped. Furthermore, EuO is epitaxially integrated with silicon and GaN. These results demonstrate the high potential of EuO for spintronic devices.

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