Hybrid metrology for critical dimension based on scanning methods for IC manufacturing

Foucher, J.; Figueiro, Nivea; Rouxel, Justin; Thérèse, R.

doi:10.1117/12.919650

Cited by 5 publications

(1 citation statement)

References 2 publications

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“…Hybrid metrology [1][2][3] is a commonly used method for measuring critical dimensions in which samples are jointly characterized by utilizing two or more micro-nano characterization devices in current times. In linewidth measurements, we often use techniques such as atomic force microscopy (AFM) [4,5], scanning electron microscopy (SEM) [6][7][8], transmission electron microscopy (TEM) [9,10], or scatterometry to measure linewidth values.…”

Section: Introductionmentioning

confidence: 99%

Research on Tip Characterization Techniques Based on Two-Dimensional Self-Traceable Nano-Gratings

Xiong,

Gou,

Tang

et al. 2023

Photonics

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The characterization of scanning tip morphology is crucial for accurate linewidth measurements. Conventional rectangular characterizers are affected by lateral distortion caused by the nonlinearities in AFM scanning, leading to errors between the actual characterization results and the true values. In this study, we innovatively developed self-traceable two-dimensional nano-gratings using chromium atomic deposition technology and extreme ultraviolet interference lithography. We used this structure as a characterizer for conducting scanning tip characterizations.This paper analyzed the periodic stability of the grating sample during scanning and corrected the lateral distortion of atomic force microscopy (AFM) at scan scales of 0.5 µm and 1 µm based on its self-traceable characteristics. Additionally, we extracted the angle information of the scanning tip in the X direction and Y direction within a scan scale of 0.5 µm. The results demonstrate that the two-dimensional grating sample exhibited excellent periodic stability during scanning. The characterization errors for the tip’s X direction and Y direction angles are within ±2°, showing high consistency. This study highlights that self-traceable two-dimensional grating samples have the capability for in situ bidirectional characterization of tip information, providing a creative solution for the development of new-style tip characterizers.

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Section: Introductionmentioning

confidence: 99%

Research on Tip Characterization Techniques Based on Two-Dimensional Self-Traceable Nano-Gratings

Xiong,

Gou,

Tang

et al. 2023

Photonics

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Critical dimension metrology by through-focus scanning optical microscopy beyond the 22 nm node

Attota¹,

Bunday²,

Vartanian³

2013

Applied Physics Letters

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We present results using simulations and experiments to demonstrate metrological applications of the through-focus scanning optical microscopy (TSOM) down to features at and well below the International Technology Roadmap for Semiconductors' 22 nm node. The TSOM method shows the ability to detect sub-nanometer, three-dimensional shape variations such as line height, sidewall angle, width, and pitch in fins of fin-shaped field effect transistor structures using conventional optical microscopes. In addition, the method requires targets substantially smaller than the conventional target size. These results provide insight into the applicability of TSOM for economical critical dimension and yield enhancement metrology.

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Apparent size effects on dopant activation in nanometer-wide Si fins

Folkersma

Bogdanowicz

Favia

et al. 2021

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Hybrid metrology for critical dimension based on scanning methods for IC manufacturing

Cited by 5 publications

References 2 publications

Research on Tip Characterization Techniques Based on Two-Dimensional Self-Traceable Nano-Gratings

Research on Tip Characterization Techniques Based on Two-Dimensional Self-Traceable Nano-Gratings

Critical dimension metrology by through-focus scanning optical microscopy beyond the 22 nm node

Apparent size effects on dopant activation in nanometer-wide Si fins

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