Hybrid-orientation technology (HOT): opportunities and challenges

Yang, Min; Chan, V.; Chan, K.; Shi, L.; Fried, D.; Stathis, J. H.; Chou, A.; Gusev, Evgeni; Ott, J. A.; Burns, Lindsay E.; Fischetti, Massimo V.; Ieong, M.

doi:10.1109/ted.2006.872693

Cited by 160 publications

(32 citation statements)

References 43 publications

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“…Consequently, the SL-constituent materials and the SLs can have very different band structures depending on the surface orientation on which the pseudomorphic growth takes place. The possibility of having silicon wafers with multiple sets of active areas, each with different crystalline orientation [9,10], enables the utilization of surface orientation as a tool for band structure engineering. However, there is much less experience in the epitaxial pseudomorphic growth of heterostructures on (1 1 0) or (1 1 1) surfaces than on (1 0 0) surfaces, which could delay the availability of high-quality SL layers on these surfaces.…”

Section: Previous Work On Si-based Superlatticesmentioning

confidence: 99%

Novel Si–Ge–C superlattices and their applications

Augusto

Forester

2015

Solid-State Electronics

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Section: Previous Work On Si-based Superlatticesmentioning

confidence: 99%

Novel Si–Ge–C superlattices and their applications

Augusto

Forester

2015

Solid-State Electronics

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“…Consequently, the SL components and the SLs can have very different band structures depending on the surface orientation on which the pseudomorphic growth takes place. The possibility of having silicon wafers with multiple sets of active areas, each with different crystalline orientation [2], enables the utilization of surface orientation as a tool for band structure engineering.…”

Section: Previous Work On Si-based Superlatticesmentioning

confidence: 99%

Novel Si-Ge-C superlattices and their applications

Augusto

Forester

2014

2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)

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“…15, has been proposed. 73,74 Symmetrical performance of nMOS and pMOS devices is achieved by using this novel technology, so that area can be significantly saved. HOT is fully compatible with existing very large-scale integration (VLSI) technology in that no new material is introduced, and the device structure remains planar.…”

Section: Hybrid-orientation Channelmentioning

confidence: 99%

“…73,78 Starting with a hybrid-orientation substrate, a thin oxide/SiN stack is deposited. One additional block lithography and reactive ion etching (RIE) step is used to etch through the entire stack, and the surface of the underlying handle wafer is exposed.…”

Section: Hybrid-orientation Substrate Preparationmentioning

confidence: 99%

Mobility Enhancement Technology for Scaling of CMOS Devices: Overview and Status

Song

Zhou

et al. 2011

Journal of Elec Materi

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The aggressive downscaling of complementary metal-oxide-semiconductor (CMOS) technology to the sub-21-nm technology node is facing great challenges. Innovative technologies such as metal gate/high-k dielectric integration, source/drain engineering, mobility enhancement technology, new device architectures, and enhanced quasiballistic transport channels serve as possible solutions for nanoscaled CMOS. Among them, mobility enhancement technology is one of the most promising solutions for improving device performance. Technologies such as global and process-induced strain technology, hybrid-orientation channels, and new high-mobility channels are thoroughly discussed from the perspective of technological innovation and achievement. Uniaxial strain is superior to biaxial strain in extending metal-oxide-semiconductor field-effect transistor (MOSFET) scaling for various reasons. Typical uniaxial technologies, such as embedded or raised SiGe or SiC source/ drains, Ge pre-amorphization source/drain extension technology, the stress memorization technique (SMT), and tensile or comprehensive capping layers, stress liners, and contact etch-stop layers (CESLs) are discussed in detail. The initial integration of these technologies and the associated reliability issues are also addressed. The hybrid-orientation channel is challenging due to the complicated process flow and the generation of defects. Applying new highmobility channels is an attractive method for increasing carrier mobility; however, it is also challenging due to the introduction of new material systems. New processes with new substrates either based on hybrid orientation or composed of group III-V semiconductors must be simplified, and costs should be reduced. Different mobility enhancement technologies will have to be combined to boost device performance, but they must be compatible with each other. The high mobility offered by mobility enhancement technologies makes these technologies promising and an active area of device research down to the 21-nm technology node and beyond.

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Hybrid-orientation technology (HOT): opportunities and challenges

Cited by 160 publications

References 43 publications

Novel Si–Ge–C superlattices and their applications

Novel Si–Ge–C superlattices and their applications

Novel Si-Ge-C superlattices and their applications

Mobility Enhancement Technology for Scaling of CMOS Devices: Overview and Status

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