Hybrid photo‐receiver based on SiGe heterojunction photo‐transistor for low‐cost 60 GHz intermediate‐frequency radio‐over‐fibre applications

Viana, Carlos; Tegegne, Zerihun Gedeb; Rosales, Marc; Polleux, Jean-Luc; Algani, Catherine; Lecocq, Vincent; Lyszyk, C.; Denet, S.

doi:10.1049/el.2015.0062

Cited by 13 publications

(9 citation statements)

References 9 publications

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“…S HORT distance optical-communication systems encourage the development of optoelectronic components on a Silicon platform. In particular, ultra-low-cost silicon based optoelectronic devices are highly desirable for Radio-over-Fiber (RoF) applications within buildings and houses [1], [2]. SiGe Heterojunction bipolar Phototransistors (HPT) is one of the optoelectronic device that are recently proposed for a direct integration with a high speed SiGe technologies using standard bipolar transistors [3]- [9].…”

Section: Introductionmentioning

confidence: 99%

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Study of Lateral Scaling Impact on the Frequency Performance of SiGe Heterojunction Bipolar Phototransistor

Tegegne

Viana

Grzeskowiak

et al. 2018

IEEE J. Quantum Electron.

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The influence of the lateral scaling such as emitter width and length on the frequency behavior of SiGe bipolar transistor is experimentally studied. Electrical transistors of different emitter sizes are designed and fabricated by using a commercial bipolar transistor technology. The effect of peripheral current and collector current spreading on electrical bipolar transistor performances are analyzed in regards to the state of the art. Furthermore, the lateral scaling effect on SiGe phototransistor electrical and opto-microwave frequency behavior is studied. The impact of the lateral flow of photo-generated carriers toward the optical opening in phototransistor structure is investigated. Moreover, the 2-D carrier flow effect on the opto-microwave frequency behavior of the phototransistor is characterized through optomicrowave scanning near-field optical microscopy measurements, in the course of which the intrinsic parameters, such as transit time and junction capacitances are extracted over the surface of the phototransistor. An intrinsic optical transition frequency of 6.5 GHz is measured for 10 × 10 µm 2 . Portugal, in 2010, and the Ph.D. degree in electronics, optoelectronics and systems from Université Paris-Est, Champs-sur-Marne, France, in 2014.Since 2010, he has been a Researcher with the ESYCOM Laboratory, ESIEE-Paris, Noisy-le-Grand, France. His research interest includes optoelectronic device developments, integration, and packaging for low cost radio-over-fiber technology applications.Jean-Luc Polleux received the master's/Diplôme d'ingénieur degree in microelectronic from ENSEIRB, Bordeaux, France, and the DEA degree in electronic and telecommunications from the University of Bordeaux 1, France, both in 1997, and the Ph.D. degree in the optomicrowave from CNAM, Paris, in 2001. He joined ESIEE-Paris, Université Paris-Est, France, and the joint ESYCOM Laboratory, where he is currently an Associate Professor. He is also an Administrator of Optics'Valley, Ile-de-France region, and the Head of the International Master of Electronics, ESIEE Paris, UPE. He published over 60 scientific publications and two patents. His current research involves microwave-photonics devices and systems for radio-over-fibre applications with special emphasis on microwave phototransistors (SiGe/Si and InGaAs/InP), silicon-based integration and packaging, analogue VCSELs, and opto-microwave devices modeling. He co-organized three international workshops and co-chaired the local committee of the French microwave conference JNM2013. He was a Guest

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Section: Introductionmentioning

confidence: 99%

“…2018.2822179 recently with SiGe HPTs [7], [12], [13]. SiGe HPTs were recently successfully used in a 3 Gbps signal radio-over-fiber transmission of IEEE 802.11.3c signals at 5 GHz [1].…”

Section: Introductionmentioning

confidence: 99%

Study of Lateral Scaling Impact on the Frequency Performance of SiGe Heterojunction Bipolar Phototransistor

Tegegne

Viana

Grzeskowiak

et al. 2018

IEEE J. Quantum Electron.

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“…Furthermore, implementation cost is a key consideration for the deployment of such MWP systems in home environment and various integrated MWP applications. Thus, BiCMOS compatible SiGe heterojunction bipolar phototransistors (SiGe HPT) are potential candidates for high speed photoreception [3] that were proposed first in 2003 [4] [5] to be integrated in standard SiGe HBT technology. Since then, several laboratories are working on SiGe HPTs using different SiGe BiCMOS industrial process technologies like TSMC [6], AMS [7] and IBM [8].…”

Section: Introductionmentioning

confidence: 99%

“…For top illuminated HPTs structures[3][16][17], the optical opening is made through the emitter. Thus, the injected light path goes through the oxide and polysilicon layers of the emitter before entering the Si emitter, Si collector regions.…”

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confidence: 99%

Improving the opto-microwave performance of SiGe/Si phototransistor through edge-illuminated structure

et al. 2016

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This paper demonstrates the experimental study of edge and top illuminated SiGe phototransistors (HPT) implemented using the existing industrial SiGe2RF Telefunken GmbH BiCMOS technology for opto-microwave (OM) applications using 850nm Multi-Mode Fibers (MMF). Its technology and structure are described. Two different optical window size HPTs with top illumination (5x5µm 2 , 10x10µm 2) and an edge illuminated HPTs having 5µm x5µm size are presented and compared. A two-step post fabrication process was used to create an optical access on the edge of the HPT for lateral illumination with a lensed MMF through simple polishing and dicing techniques. We perform Opto-microwave Scanning Near-field Optical Microscopy (OM-SNOM) analysis on edge and top illuminated HPTs in order to observe the fastest and the highest sensitive regions of the HPTs. This analysis also allows understanding the parasitic effect from the substrate, and thus draws a conclusion on the design aspect of SiGe/Si HPT. A low frequency OM responsivity of 0.45A/W and a cutoff frequency, f-3dB , of 890MHz were measured for edge illuminated HPT. Compared to the top illuminated HPT of the same size, the edge illuminated HPT improves the f-3dB by a factor of more than two and also improves the low frequency responsivity by a factor of more than four. These results demonstrate that a simple etched HPT is still enough to achieve performance improvements compared to the top illuminated HPT without requiring a complex coupling structure. Indeed, it also proves the potential of edge coupled SiGe HPT in the ultra-low-cost silicon based optoelectronics circuits with a new approach of the optical packaging and system integration to 850nm MMF.

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“…Since then, several laboratories are working on SiGe HPTs using different industrial process technologies like TSMC [6], AMS SiGe BiCMOS [7] and IBM SiGe BiCMOS [8]. Hybrid photoreceiver based on SiGe HPT for 60 GHz intermediatefrequency RoF applications was implemented in [9].…”

Section: Introductionmentioning

confidence: 99%

Substrate diode effect on the performance of Silicon Germanium phototransistors

Tegegne¹,

Viana²,

Rosales

et al. 2015

2015 International Topical Meeting on Microwave Photonics (MWP)

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Hybrid photo‐receiver based on SiGe heterojunction photo‐transistor for low‐cost 60 GHz intermediate‐frequency radio‐over‐fibre applications

Cited by 13 publications

References 9 publications

Study of Lateral Scaling Impact on the Frequency Performance of SiGe Heterojunction Bipolar Phototransistor

Study of Lateral Scaling Impact on the Frequency Performance of SiGe Heterojunction Bipolar Phototransistor

Improving the opto-microwave performance of SiGe/Si phototransistor through edge-illuminated structure

Substrate diode effect on the performance of Silicon Germanium phototransistors

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