2016
DOI: 10.1107/s1600576716004441
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Hybrid reciprocal lattice: application to layer stress determination in GaAlN/GaN(0001) systems with patterned substrates

Abstract: Epitaxy of semiconductors is a process of tremendous importance in applied science and in the optoelectronics industry. The control of defects introduced during epitaxial growth is a key point in manufacturing devices of high efficiency and durability. In this work, it is demonstrated how useful hybrid reflections are for the study of epitaxial structures with anisotropic strain gradients due to patterned substrates. High accuracy in detecting and distinguishing elastic and plastic relaxations is one of the gr… Show more

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Cited by 13 publications
(15 citation statements)
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“…Hybrid reflections (HRs) from multiple x-ray diffraction are known to cause extra features in diffraction data of thin films. In general, they can be easily avoided or identified by changing the sample azimuth [1], or they can be used as a tool for studying heteroexpitaxial films [3][4][5][6][7] and superlattices [8]. In a new class of epitaxial systems with potential applications in spintronic and quantum computation, film and substrate materials have quite different lattices [9][10][11][12].…”
mentioning
confidence: 99%
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“…Hybrid reflections (HRs) from multiple x-ray diffraction are known to cause extra features in diffraction data of thin films. In general, they can be easily avoided or identified by changing the sample azimuth [1], or they can be used as a tool for studying heteroexpitaxial films [3][4][5][6][7] and superlattices [8]. In a new class of epitaxial systems with potential applications in spintronic and quantum computation, film and substrate materials have quite different lattices [9][10][11][12].…”
mentioning
confidence: 99%
“…Measuring off-specular-rod HRs as a function of the incidence angle has been the most reliable procedure to evidence small amount of interface defects in epitaxial films, with accuracy better than the 0.05% limit of standard methods via asymmetric reflections [6]. Due to the very small mismatch of 0.04%, relaxation of thin Bi 2 Te 3 films on BaF 2 (111) is beyond the detectability limit of current methods.…”
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confidence: 99%
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“…Fig. 1, bottom panel), which is also very useful for other diffraction techniques in semiconductor devices and single crystals in general (Domagała et al, 2016;Nisbet et al, 2015). Diffraction data from single crystals of d-alanine collected at two synchrotron facilities and with different instrumentation (flux, optics and goniometry) are presented.…”
Section: Physical Phase Measurements In X-ray Crystallographymentioning
confidence: 99%
“…on a sample xyz frame where z is along the azimuthal rotation axis (Domagała et al, 2016 (a) Difference Á in structure factor phases regarding the proposed models, as detailed in the inset (NH3 ! F G and N3e !…”
Section: Graphical Indexing Of Renninger Scansmentioning
confidence: 99%