Hybrid Semiconductor-Molecular Integrated Circuits for Digital Electronics: CMOL Approach

Strukov, Dmitri B.

doi:10.1007/978-0-387-76499-3_4

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Memristors and Resistive Switching Devices1

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Cited by 2 publications

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“…This property is actually common for nanoscale films and has been observed in a variety of material systems, e.g. transition metal oxides and perovskites, various superionic conductors composed of chalcogenides and metal electrodes, and organic polymer films [6]. Figure 1 shows typical switching I-V of the memristive device based on thin film of titanium dioxide where resistance change is due to electric field assisted modulation of oxygen vacancies profile [7].…”

Section: Memristors and Resistive Switching Devicesmentioning

confidence: 88%

Hybrid CMOS/memristor circuits

Strukov

Stewart

Borghetti

et al. 2010

Proceedings of 2010 IEEE International Symposium on Circuits and Systems

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-This is a brief review of recent work on the prospective hybrid CMOS/memristor circuits. Such hybrids combine the flexibility, reliability and high functionality of the CMOS subsystem with very high density of nanoscale thin film resistance switching devices operating on different physical principles. Simulation and initial experimental results demonstrate that performance of CMOS/memristor circuits for several important applications is well beyond scaling limits of conventional VLSI paradigm.

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Section: Memristors and Resistive Switching Devicesmentioning

confidence: 88%