Hybrid silicon photonics flip-chip laser integration with vertical self-alignment

Moscoso-Mártir, Alvaro; Merget, Florian; Mueller, Juliana; Hauck, Johannes; Romero-García, Sebastián; Shen, Bin; Lelarge, F.; Brenot, R.; Garreau, Alexandre; Mentovich, Elad; Sandomirsky, Anna; Badihi, A.; Rasmussen, Daniel E.; Setter, R.; Witzens, Jeremy

doi:10.1109/cleopr.2017.8118971

Cited by 25 publications

(15 citation statements)

References 11 publications

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“…The epitaxy structure, as shown in Fig. 3(a), is similar to previously demonstrated heterogeneous laser structures 33 with low-loss evanescent coupling to the Si photonic circuits. The InGaAsP-based MQW is designed for light emission at 1.31 μm.…”

Section: Epitaxial Regrowth and Materials Characterizations Epitaxial Regrowthsupporting

confidence: 57%

“…Sequential multiple growths on the same template can be a routine procedure to enable advanced, large wafer-scale, dense photonic integration. A good example in silicon photonics is the integration of light sources, amplifiers, modulators and detectors on a single chip with close proximity and low coupling loss by implementing multiple selective regrowth on a single bonding template instead of bonding three or four types of epitaxial structures on each chip 38 . We believe that various functional materials grown on a single bonded substrate could be emerging as large-scale process.…”

Section: Discussion and Summarymentioning

confidence: 99%

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An advanced III-V-on-silicon photonic integration platform

Hu¹,

Liang²,

Beausoleil³

2021

OEA

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In many application scenarios, silicon (Si) photonics favors the integration of III-V gain material onto Si substrate to realize the on-chip light source. In addition to the current popular integration approaches of III-V-on-Si wafer bonding or direct heteroepitaxial growth, a newly emerged promising solution of epitaxial regrowth on bonded substrate has attracted a lot of interests. High-quality III-V material realization and successful laser demonstrations show its great potential to be a promising integration platform for low-cost, high-integration density and highly scalable active-passive photonic integration on Si. This paper reviews recent research work on this regrowth on bonded template platform including template developments, regrown material characterizations and laser demonstrations. The potential advantages, opportunities and challenges of this approach are discussed.

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Section: Epitaxial Regrowth and Materials Characterizations Epitaxial Regrowthsupporting

confidence: 57%

Section: Discussion and Summarymentioning

confidence: 99%

An advanced III-V-on-silicon photonic integration platform

Hu¹,

Liang²,

Beausoleil³

2021

OEA

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“…The modeled -3 dB alignment tolerance is actually slightly worse for the ATEC (±0.7 µm vs. ±1 µm for the SEC), as a consequence of it being referenced to the IL optimum at x=±1.7 µm but being taken along the x=0 µm axis. This is however acceptable for the application pursued here, as the ATEC is meant to facilitate flip-chip integration for which the accuracy in x and z is determined by the placement accuracy, but the vertical alignment is defined by mechanical contacts, for example between the III-V chip and pedestals formed in a common substrate [11] or in the PIC [24].…”

Section: A Alignment Tolerant Edge Couplersmentioning

confidence: 99%

Silicon Nitride External Cavity Laser With Alignment Tolerant Multi-Mode RSOA-to-PIC Interface

Ghannam

Shen

Merget

et al. 2022

IEEE J. Select. Topics Quantum Electron.

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We demonstrate an external cavity laser formed by combining a silicon nitride photonic integrated circuit with a reflective semiconductor optical amplifier. The laser uses an alignment tolerant edge coupler formed by a multi-mode waveguide splitter right at the edge of the silicon nitride chip that relaxes the required alignment to the III-V gain chip and equally splits the power among its two output waveguides. Both the ground and first order mode are excited in the coupler and reach the quadrature condition at the waveguide junction, ensuring equal power to be coupled to both. Two high-quality-factor ring resonators arranged in Vernier configuration close a Sagnac loop between the two waveguides. In addition to wideband frequency tuning, they result in a longer effective cavity length. The alignment tolerant coupler increases the alignment tolerance in the two directions parallel to the chip surface by a factor 3 relative to conventional edge couplers, making it ideal for gain chip integration via pick-and-place technology. Lasing is maintained in a misalignment range of ±6 µm in the direction along the edge of the chip. A Lorentzian laser linewidth of 39 kHz is achieved.

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“…In some commercial solutions, such hybrid integration is facilitated by first mounting the laser in a micro-package, 5 that can enable isolation and active alignment. 6 Further research efforts aim at hybrid III-V chip integration without requiring a dedicated micro-package, among them flip-chip integration [7][8][9][10] as well as laser integration via photonic wire bonds. 11,12 Flip-chip integration in particular has the potential for being a very high throughput integration scheme.…”

Section: Introductionmentioning

confidence: 99%

Flip-chip-integrated silicon nitride ECL at 640nm with relaxed alignment tolerances

Kluge

Schulten

Mashayekh

et al. 2022

Silicon Photonics XVII

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We present work towards a visible wavelength tuneable external cavity laser (ECL) on a silicon nitride platform working around 640 nm. A ring resonator Vernier structure on the photonic integrated circuit (PIC) provides delayed feedback with spectral filtering and tuning. Gain is provided by a reflective semiconductor optical amplifier (SOA) grown on a GaAs substrate and integrated by pick-and-place flip-chip assembly. In a novel coupling scheme, the 1-dB in-plane placement tolerance is relaxed by a multi-mode edge-coupler to ± 2.6 µm in the direction parallel to the SOA edge and to displacements up to 3.5 µm from the PIC interface along the SOA's optical axis. Pedestals defined in the PIC guarantee vertical alignment.

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Hybrid silicon photonics flip-chip laser integration with vertical self-alignment

Cited by 25 publications

References 11 publications

An advanced III-V-on-silicon photonic integration platform

An advanced III-V-on-silicon photonic integration platform

Silicon Nitride External Cavity Laser With Alignment Tolerant Multi-Mode RSOA-to-PIC Interface

Flip-chip-integrated silicon nitride ECL at 640nm with relaxed alignment tolerances

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