Hole-doped perovskite bismuthates such as Ba1−xKxBiO3 and Sr1−xKxBiO3 are well-known bismuth-based oxide high-transition-temperature superconductors. Reported thin bismuthate films show relatively low quality, likely due to their large lattice mismatch with the substrate and a low sticking coefficient of Bi at high temperatures. Here, we report the successful epitaxial thin film growth of the parent compound strontium bismuthate SrBiO3 on SrO-terminated SrTiO3 (001) substrates by molecular beam epitaxy. Two different growth methods, high-temperature co-deposition or recrystallization cycles of low-temperature deposition plus high-temperature annealing, are developed to improve the epitaxial growth. SrBiO3 has a pseudocubic lattice constant ∼4.25Å, an ∼8.8% lattice mismatch on SrTiO3 substrate, leading to a large strain in the first few unit cells. Films thicker than 6 unit cells prepared by both methods are fully relaxed to bulk lattice constant and have similar quality. Compared to high-temperature co-deposition, the recrystallization method can produce higher quality 1-6 unit cell films that are coherently or partially strained. Photoemission experiments reveal the bonding and antibonding states close to the Fermi level due to Bi and O hybridization, in good agreement with density functional theory calculations. This work provides general guidance to the synthesis of high-quality perovskite bismuthate films.Hole-doped perovskite bismuthates Ba 1−x K x BiO 3 (x = 0.4) and Sr 1−x K x BiO 3 (x = 0.6) become superconducting below ∼30 K and ∼12 K, respectively [1,2]. Their parent compounds BaBiO 3 (BBO) and SrBiO 3 (SBO) have drawn intense interest [3][4][5][6][7][8][9][10][11][12][13][14][15][16] owing to the hightemperature superconductivity and also because of their indirect bandgap semiconductor nature rather than metals as would be expected from the half-filled Bi 6s band assuming the formal 4+ valence of Bi. The most common explanation of the nonmetallic behavior invokes the concept of charge disproportionation of Bi 4+ into the more stable and closed-shell atomic configurations of Bi 3+ (6s 2 ) and Bi 5+ (6s 0 ) [3,4,17]. This would inevitably result in a long Bi 3+ -O and a short Bi 5+ -O bond lengths ordered in the simplest conceivable structure with bond length alternation along the three crystallographic axes. Such bond disproportionation is observed in neutron and x-ray diffraction (XRD) [4,11] and in the resulting band structure [6,8]. However, x-ray photoemission spectroscopy (XPS) and density functional theory (DFT) calculations show that the charge difference between the two inequivalent Bi sites is trivial, at most a few tenths of one electron [8,10,[18][19][20][21]. By DFT calculation, Foyevtsova et al. recently demonstrates that the bands straddling the Fermi level are in fact strongly hybridized Bi 6s with O 2p molecular orbitals with A 1g symmetry and contain more O 2p character than Bi 6s character, resulting in the bonding states at ∼10 eV below the Fermi energy and the unoccupied antibonding ...