2020
DOI: 10.1016/j.susc.2020.121651
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Hybridization versus sublattice symmetry breaking in the band gap opening in graphene on Ni(111): A first-principles study

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Cited by 4 publications
(3 citation statements)
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“…Its applicability in engineering thermal management, particularly in the context of electronic device heat dissipation, is noteworthy. , However, the inherent absence of a bandgap in graphene confines its utility in scenarios where optoelectronics, electronics, and high thermal conductivity intersect. To address this limitation, researchers have diligently explored various strategies aimed at introducing a bandgap, including doping, defects engineering, applying mechanical stress, , and so on . Regrettably, these approaches have yielded only modest bandgap openings in graphene, with some methods even jeopardizing the integrity of its lattice structure, , thereby resulting in compromised electronic properties and reduced heat transport efficiency.…”
Section: Introductionmentioning
confidence: 99%
“…Its applicability in engineering thermal management, particularly in the context of electronic device heat dissipation, is noteworthy. , However, the inherent absence of a bandgap in graphene confines its utility in scenarios where optoelectronics, electronics, and high thermal conductivity intersect. To address this limitation, researchers have diligently explored various strategies aimed at introducing a bandgap, including doping, defects engineering, applying mechanical stress, , and so on . Regrettably, these approaches have yielded only modest bandgap openings in graphene, with some methods even jeopardizing the integrity of its lattice structure, , thereby resulting in compromised electronic properties and reduced heat transport efficiency.…”
Section: Introductionmentioning
confidence: 99%
“…The metal substrate affects the electronic properties of the two-dimensional material. Thus, ab initio calculations showed that in graphene on a Ni (111) substrate, a band gap can open; the limiting value is ~400 meV [ 12 ]. Note that free-standing graphene has a zero-energy gap, while the silicene is a narrow-gap semiconductor with a 27 meV energy gap [ 13 ].…”
Section: Introductionmentioning
confidence: 99%
“…Other authors' studies focused on tuning the band structure via the symmetry of the dopant atoms to the graphene surface and modifying the graphene positions concerning the substrate [19,20]. Studies involving fluorine, nitrogen, and oxygen have helped compare the different resulting properties obtained for each of them, although they have focused on a single value dopant concentration [21,22].…”
Section: Introductionmentioning
confidence: 99%