We report on the passivation properties of molecularly modified,
oxide-free Si(111) surfaces. The reaction of 1-alcohol with the H-passivated
Si(111) surface can follow two possible paths, nucleophilic substitution
(SN) and radical chain reaction (RCR), depending on adsorption
conditions. Moderate heating leads to the SN reaction,
whereas with UV irradiation RCR dominates, with SN as a
secondary path. We show that the site-sensitive SN reaction
leads to better electrical passivation, as indicated by smaller surface
band bending and a longer lifetime of minority carriers. However,
the surface-insensitive RCR reaction leads to more dense monolayers
and, therefore, to much better chemical stability, with lasting protection
of the Si surface against oxidation. Thus, our study reveals an inherent
dissonance between electrical and chemical passivation. Alkoxy monolayers,
formed under UV irradiation, benefit, though, from both chemical and
electronic passivation because under these conditions both SN and RCR occur. This is reflected in longer minority carrier lifetimes,
lower reverse currents in the dark, and improved photovoltaic performance,
over what is obtained if only one of the mechanisms operates. These results show how chemical kinetics and reaction paths impact
electronic properties at the device level. It further suggests
an approach for effective passivation of other semiconductors.