Hydride multibarrel reactors suitable for microwave and optoelectronic (Ga, In)(As, P) heterostructure growth

Beuchet, G.; Bonnet, Muriel; Thébault, P.; Duchemin, J.P.

doi:10.1016/0022-0248(82)90494-8

Cited by 25 publications

(7 citation statements)

References 5 publications

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“…Indeed, the synthesis of InN is difficult because of its low dissociation temperature. 4,5 In this article, we have studied the influence of temperature on the nitridation of indium phosphide substrates. The composition of the nitrided surface was studied in situ by x-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES).…”

Section: Introductionmentioning

confidence: 99%

Study of InP(100) surface nitridation by x‐ray photoelectron spectroscopy

Bideux

Ould-Metidji

Gruzza

et al. 2002

Surface & Interface Analysis

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Ion beam nitridation of indium phosphide (100) substrates was studied using x-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). Argon ion bombardment of the InP(100) surface removes the native oxides and induces the formation of three-dimensional indium clusters. After cleaning, the samples were nitrided in an ultrahigh vacuum chamber using a home-made radiofrequency plasma source (13.56 MHz) that allows nitridation at low pressures (10 −4 Pa). We have studied the influence of temperature on the nitridation mechanisms. For low temperature (T < 200• C), no variation of the metallic indium droplets was observed; for high temperature (T > 270 • C), the first layers of the substrate were damaged. The optimal temperature for the nitridation of InP(100) was found to be 250 • C.

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Section: Introductionmentioning

confidence: 99%

Study of InP(100) surface nitridation by x‐ray photoelectron spectroscopy

Bideux

Ould-Metidji

Gruzza

et al. 2002

Surface & Interface Analysis

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“…Before the introduction in the ultrahigh vacuum chamber, they were chemically cleaned in different ultrasonic baths (deionised water, CH 3 OH, H 2 SO 4 96%, Br-CH 3 OH) [6]. After introduction into the chamber, a low amount of carbon and oxygen contamination was detected.…”

Section: Methodsmentioning

confidence: 99%

Nitridation of InP(100) surface studied by synchrotron radiation

et al. 2005

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Abstract:The nitridation of InP(100) surfaces has been studied using synchrotron radiation photoemission. The samples were chemically cleaned and then ion bombarded, which cleaned the surface and also induced the formation of metallic indium droplets. The nitridation with a Glow Discharge Cell (GDS) produced indium nitride by reaction with these indium clusters. We used the In 4d and P 2p core levels to monitor the chemical state of the surface and the coverage of the species present. We observed the creation of In-N and P-N bonds while the In-In metallic bonds decrease which confirm the reaction between indium clusters and nitrogen species. A theoretical model based on stacked layers allows to assert that almost two monolayers of indium nitride are produced. The effect of annealing on the nitridated layers at 450°C has been also analysed. It appears that this system is stable until this temperature, well above the congruent evaporation temperature (370°C) of clean InP(100) : no increase of metallic indium bonds due to decomposition of the substrate is detected as shown in previous works [16] studying the InP(100) surfaces I.

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“…S-doped InP (1 0 0) samples have been used; they were cleaned ex-situ in ultrasonic bath before introduction in the ultra-high vacuum chamber (10 À7 Pa) [13,14]. After introduction into the UHV system, a low amount of carbon and oxygen contamination was detected.…”

Section: Methodsmentioning

confidence: 99%