Hydride vapor phase epitaxy and characterization of high-quality ScN epilayers

Oshima, Yuki; Vı́llora, Encarnación G.; Shimamura, Kiyoshi

doi:10.1063/1.4871656

Cited by 45 publications

(29 citation statements)

References 41 publications

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“…Migration to other deposition techniques such as HVPE may also result in orders of magnitude higher mobility as was shown for n-type pure ScN in Ref. 32.…”

Section: Figure 3 (A) Electrical Resistivity and Carrier Concentratimentioning

confidence: 92%

“…4,28-30 (MBE), dc-magnetron sputtering 2,8,31 , hybrid vapor phase epitaxy 5,6,32 (HVPE) and other 33,34 methods have been employed over the years to deposit epitaxial ScN thin films on MgO, Al2O3 (sapphire) and Si substrates 35 . As-deposited ScN thin-film deposited with most of these growth techniques result in n-type semiconductors having a large carrier concentrations in ~10…”

Section: Molecular Beam Epitaxymentioning

confidence: 99%

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Compensation of native donor doping in ScN: Carrier concentration control and p-type ScN

Saha

Garbrecht

Taborda³

et al. 2017

Applied Physics Letters

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Scandium nitride (ScN) is an emerging indirect bandgap rocksalt semiconductor that has attracted significant attention in recent years for its potential applications in thermoelectric energy conversion devices, as a semiconducting component in epitaxial metal/semiconductor superlattices and as a substrate material for high quality GaN growth. Due to the presence of oxygen impurities and native defects such as nitrogen vacancies, sputter-deposited ScN thin-films are highly degenerate n-type semiconductors with carrier concentrations in the (1–6) × 1020 cm−3 range. In this letter, we show that magnesium nitride (MgxNy) acts as an efficient hole dopant in ScN and reduces the n-type carrier concentration, turning ScN into a p-type semiconductor at high doping levels. Employing a combination of high-resolution X-ray diffraction, transmission electron microscopy, and room temperature optical and temperature dependent electrical measurements, we demonstrate that p-type Sc1-xMgxN thin-film alloys (a) are substitutional solid solutions without MgxNy precipitation, phase segregation, or secondary phase formation within the studied compositional region, (b) exhibit a maximum hole-concentration of 2.2 × 1020 cm−3 and a hole mobility of 21 cm2/Vs, (c) do not show any defect states inside the direct gap of ScN, thus retaining their basic electronic structure, and (d) exhibit alloy scattering dominating hole conduction at high temperatures. These results demonstrate MgxNy doped p-type ScN and compare well with our previous reports on p-type ScN with manganese nitride (MnxNy) doping.

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“…Migration to other deposition techniques such as HVPE may also result in orders of magnitude higher mobility as was shown for n-type pure ScN in Ref. 32.…”

Section: Figure 3 (A) Electrical Resistivity and Carrier Concentratimentioning

confidence: 92%

Section: Molecular Beam Epitaxymentioning

confidence: 99%

Compensation of native donor doping in ScN: Carrier concentration control and p-type ScN

Saha

Garbrecht

Taborda³

et al. 2017

Applied Physics Letters

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“…[8][9][10][11][12] It has been shown that the carrier concentration can be slightly reduced for ScN thin films obtained by gas source molecular beam epitaxy (GSMBE) with a base pressure of 10 À10 Torr 13,14 or by efficiently suppressing impurity concentration during hybrid vapor phase epitaxy (HVPE) using a home-designed corrosive-free HVPE reactor. 15 Oxygen, which forms a solid solution alloy with ScN, causes a shift of the Fermi energy into the conduction band without changing the density of states (DOS) of pure ScN, 10,16 and it, thus, enhances the carrier concentration and electrical conductivity. 16 For years, ScN remained relatively unexplored.…”

Section: Introductionmentioning

confidence: 99%

Effect of deposition pressure on the microstructure and thermoelectric properties of epitaxial ScN(001) thin films sputtered onto MgO(001) substrates

et al. 2015

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Four epitaxial ScN(001) thin films were successfully deposited on MgO(001) substrates by dc reactive magnetron sputtering at 2, 5, 10, and 20 mTorr in an Ar/N 2 ambient atmosphere at 650°C. The microstructure of the resultant films was analyzed by x-ray diffraction, scanning electron microscopy, and transmission electron microscopy. Electrical resistivity, electron mobility and concentration were measured using the room temperature Hall technique, and temperature dependent in-plain measurements of the thermoelectric properties of the ScN thin films were performed. The surface morphology and film crystallinity significantly degrade with increasing deposition pressure. The ScN thin film deposited at 20 mTorr exhibits the presence of ,221. oriented secondary grains resulting in decreased electric properties and a low thermoelectric power factor of 0.5 W/mK 2 at 800 K. The ScN thin films grown at 5 and 10 mTorr are single crystalline, yielding the power factor of approximately 2.5 W/mK 2 at 800 K. The deposition performed at 2 mTorr produces the highest quality ScN thin film with the electron mobility of 98 cm 2 V À1 s À1 and the power factor of 3.3 W/mK 2 at 800 K.

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“…ScN is stable in the cubic rock‐salt structure with an a lattice constant of 4.51 Å while GaN favours the hexagonal wurtzite structure with an a lattice constant of 3.189 Å and c lattice constant of 5.185 Å . ScN is of interest in its own right as an electronic and thermoelectric material and as a dislocation reduction layer in GaN heterostructures . The structural stability of different phases of ScN and Sc x Ga 1 −x N has been investigated by theoretical calculations .…”

Section: Introductionmentioning

confidence: 99%

The effect of metal‐rich growth conditions on the microstructure of Sc_xGa_1−xN films grown using molecular beam epitaxy

Tsui

Goff

Barradas

et al. 2015

Physica Status Solidi (a)

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This is a repository copy of The effect of metal-rich growth conditions on the microstructure of ScxGa1-xN films grown using molecular beam epitaxy.White Rose Research Online URL for this paper: http://eprints.whiterose.ac.uk/93558/ Version: Accepted Version Article:Tsui, H.C.L., Goff, L.E., Barradas, N.P. et al. (7 more authors) (2015) The effect of metal-rich growth conditions on the microstructure of ScxGa1-xN films grown using molecular beam epitaxy. physica status solidi (a), 212 (12). 2837 -2842. ISSN 1862-6300 https://doi.org/10.1002/pssa.201532292 eprints@whiterose.ac.uk https://eprints.whiterose.ac.uk/ Reuse Unless indicated otherwise, fulltext items are protected by copyright with all rights reserved. The copyright exception in section 29 of the Copyright, Designs and Patents Act 1988 allows the making of a single copy solely for the purpose of non-commercial research or private study within the limits of fair dealing. The publisher or other rights-holder may allow further reproduction and re-use of this version -refer to the White Rose Research Online record for this item. Where records identify the publisher as the copyright holder, users can verify any specific terms of use on the publisher's website. TakedownIf you consider content in White Rose Research Online to be in breach of UK law, please notify us by emailing eprints@whiterose.ac.uk including the URL of the record and the reason for the withdrawal request. AbstractEpitaxial ScxGa1-xN films with 0 x 0.50 were grown using molecular beam epitaxy under metal-rich conditions. The ScxGa1-xN growth rate increased with increasing Sc flux despite the use of metal-rich growth conditions, which is attributed to the catalytic decomposition of N2 induced by the presence of Sc. Microstructural analysis showed that phase-pure wurtzite ScxGa1-xN was achieved up to x = 0.26, which is significantly higher than that previously reported for nitrogen-rich conditions, indicating that the use of metalrich conditions can help to stabilise wurtzite phase ScxGa1-xN.Keywords: ScGaN, molecular beam epitaxy, TEM PACS codes: 61.66Dk, 68.55Nq, 81.05Ea, 81.15Hi 1 Introduction Wurtzite-structure III-nitrides are of interest for optoelectronic and high power electronic applications. These semiconductors include AlN, GaN and InN and their alloys, which have direct band gaps of 6.2 eV, 3.4 eV and 0.7 eV respectively [1][2][3][4] and are therefore able to emit light across the ultraviolet, violet and red spectral regions. However, current state-of-the-art optoelectronic devices suffer from poor internal quantum efficiencies, partly due to the lattice mismatch with the substrate or between layers leading to high dislocation densities and in-plane stresses [5]. Therefore, it is of interest to develop new wurtzite-structure nitride semiconductors with different lattice parameter-band gap relationships, such as alloys between GaN and ScN.

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Hydride vapor phase epitaxy and characterization of high-quality ScN epilayers

Cited by 45 publications

References 41 publications

Compensation of native donor doping in ScN: Carrier concentration control and p-type ScN

Compensation of native donor doping in ScN: Carrier concentration control and p-type ScN

Effect of deposition pressure on the microstructure and thermoelectric properties of epitaxial ScN(001) thin films sputtered onto MgO(001) substrates

The effect of metal‐rich growth conditions on the microstructure of Sc_xGa_1−xN films grown using molecular beam epitaxy

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Hydride vapor phase epitaxy and characterization of high-quality ScN epilayers

Cited by 45 publications

References 41 publications

Compensation of native donor doping in ScN: Carrier concentration control and p-type ScN

Compensation of native donor doping in ScN: Carrier concentration control and p-type ScN

Effect of deposition pressure on the microstructure and thermoelectric properties of epitaxial ScN(001) thin films sputtered onto MgO(001) substrates

The effect of metal‐rich growth conditions on the microstructure of ScxGa1−xN films grown using molecular beam epitaxy

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The effect of metal‐rich growth conditions on the microstructure of Sc_xGa_1−xN films grown using molecular beam epitaxy