Hydrodynamic simulation of electron transport in n-type Hg0.8Cd0.2Te

Hydrodynamic Simulation of Drift Mobility in N-Hg_0.8Cd_0.2Te

“…The HD model is based on the equations that describe the temporal and spatial evolution of a small number of relevant variables of the statistical ensemble [6][7][8][9]. Among them, the most important are: the carriers drift velocity v and the mean energy, ε which, for a one-dimensional geometry, are written as:…”

“…Therefore, an intermediate level modelling technique is necessary. In the present work, we present a hydrodynamic model (HD) obtained from the Boltzmann transport equation [6][7][8][9]. This technique offers many advantages i.e.…”

“…This technique offers many advantages i.e. : (a) it provides a better compromise between calculation time and results accuracy; (b) it keeps coherence with the drift-diffusion model and directly benefit from the robustness of existing numerical methods and simulation experience acquired in drift-diffusion modelling [9,10]. For these reasons, we conduct our investigations with a HD model, and using MC simulation as a reference for the calculation of physical parameters.…”

Hydrodynamic modelling of electron transport in submicron Hg0.8Cd0.2Te diodes

“…In our previous work [3], we have demonstrated the robustness of the HD model to simulate the electronic transport in bulk HgCdTe (Mercury-Cadmium-Telluride, MCT) at 77 K. The majority of MCT-based devices contain a cadmium fraction x = 0.2 which allows, at 77 K, the detection in the 8-14 !m spectral region and which is thus a widely used alloy for infrared optoelectronics applications. The consequence of this alloy proportion is a narrow semiconductor band-gap of about 0.1 eV: in particular, degeneracy and impact ionization processes are activated from low electric fields of the order of 100 V/cm [4].…”

“…On the other hand, the results obtained from the MC simulations permit us also to calculate transport coefficients that can be used as input parameters for more simplified HD models. In this sense, the HD description of electron transport has been extensively applied to the analysis and design of semiconductor devices because it provides a useful compromise between computational simplicity and physical accuracy [2].In our previous work [3], we have demonstrated the robustness of the HD model to simulate the electronic transport in bulk HgCdTe (Mercury-Cadmium-Telluride, MCT) at 77 K. The majority of MCT-based devices contain a cadmium fraction x = 0.2 which allows, at 77 K, the detection in the 8-14 !m spectral region and which is thus a widely used alloy for infrared optoelectronics applications. The consequence of this alloy proportion is a narrow semiconductor band-gap of about 0.1 eV: in particular, degeneracy and impact ionization processes are activated from low electric fields of the order of 100 V/cm [4].…”