The electron mobility in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si38.svg"><mml:msub><mml:mrow><mml:mtext>H</mml:mtext><mml:mtext>g</mml:mtext></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mo>-</mml:mo><mml:mtext>x</mml:mtext></mml:mrow></mml:msub><mml:msub><mml:mrow><mml:mtext>C</mml:mtext><mml:mtext>d</mml:mtext></mml:mrow><mml:mtext>x</mml:mtext></mml:msub><mml:mtext>T</mml:mtext><mml:mtext>e</mml:mtext></mml:math> (x = 0.22 and 0.3): A comparison between experimental and theoreti

Bavani, S. Najafi; Khezrabad, M.S. Akhoundi

doi:10.1016/j.materresbull.2021.111325

Materials Research Bulletin

2021

DOI: 10.1016/j.materresbull.2021.111325

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The electron mobility in Hg1-xCdxTe (x = 0.22 and 0.3): A comparison between experimental and theoreti

S. Najafi Bavani

M.S. Akhoundi Khezrabad

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2024

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Impact of Residual Compositional Inhomogeneities on the MCT Material Properties for IR Detectors

Sobieski,

Kopytko,

Matuszelański

et al. 2024

Sensors

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HgCdTe is a well-known material for state-of-the-art infrared photodetectors. The interd-iffused multilayer process (IMP) is used for Metal–Organic Chemical Vapor Deposition (MOCVD) of HgCdTe heterostructures, enabling precise control of composition. In this method, alternating HgTe and CdTe layers are deposited, and they homogenize during growth due to interdiffusion, resulting in a near-uniform material. However, the relatively low (350 °C) IMP MOCVD growth temperature may result in significant residual compositional inhomogeneities. In this work, we have investigated the residual inhomogeneities in the IMP-grown HgCdTe layers and their influence on material properties. Significant IMP growth-related oscillations of composition have been revealed in as-grown epilayers with the use of a high-resolution Secondary Ion Mass Spectroscopy (SIMS). The oscillations can be minimized with post-growth annealing of the layers at a temperature exceeding that of growth. The electric and photoelectric characterizations showed a significant reduction in the background doping and an increase in the recombination time, which resulted in dramatic improvement of the spectral responsivity of photoconductors.

show abstract

Impact of Residual Compositional Inhomogeneities on the MCT Material Properties for IR Detectors

Sobieski,

Kopytko,

Matuszelański

et al. 2024

Sensors

View full text Add to dashboard Cite

show abstract

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The electron mobility in Hg1-xCdxTe (x = 0.22 and 0.3): A comparison between experimental and theoreti

Cited by 1 publication

References 35 publications

Impact of Residual Compositional Inhomogeneities on the MCT Material Properties for IR Detectors

Impact of Residual Compositional Inhomogeneities on the MCT Material Properties for IR Detectors

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