Hydrofluoric-Acid-Resistant and Hydrophobic Pure-Silica-Zeolite MEL Low-Dielectric-Constant Films

Lew, Christopher M.; Liu, Yan; Day, Brandon; Kloster, Grant M.; Tiznado, H.; Sun, Minwei; Zaera, Francisco; Wang, Junlan; Yan, Yushan

doi:10.1021/la803956w

Cited by 18 publications

(16 citation statements)

References 56 publications

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“…Inorganic microporous or mesoporous substances have been evaluated as low- k materials. − Porous amorphous silica synthesized using the sol–gel method can achieve low k values; ,, however, the introduction of micropores or mesopores greatly weakens the mechanical properties. − Inorganic nanotubes have also been investigated as microporous low- k materials. , The mechanical strength of crystalline microporous materials, such as zeolites, ,− generally exceeds that of amorphous porous materials. Zeolites with a variety of topologies, such as MFI, − MEL, − or LTA, , have been investigated for low- k applications. Pioneering work on in situ growth methods for the fabrication of zeolite thin films involved immersing silicon wafers in a high-pH solution, which corrodes wafers.…”

Section: Introductionmentioning

confidence: 99%

Atmospheric Pressure Plasma Jet-Assisted Synthesis of Zeolite-Based Low-k Thin Films

Kai-yu¹,

Chi²,

Kao³

et al. 2017

ACS Appl. Mater. Interfaces

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Zeolites are ideal low-dielectric constant (low-k) materials. This paper reports on a novel plasma-assisted approach to the synthesis of low-k thin films comprising pure-silica zeolite MFI. The proposed method involves treating the aged solution using an atmospheric pressure plasma jet (APPJ). The high reactivity of the resulting nitrogen plasma helps to produce zeolite crystals with high crystallinity and uniform crystal size distribution. The APPJ treatment also remarkably reduces the time for hydrothermal reaction. The zeolite MFI suspensions synthesized with the APPJ treatment are used for the wet deposition to form thin films. The deposited zeolite thin films possessed dense morphology and high crystallinity, which overcome the trade-off between crystallinity and film quality. Zeolite thin films synthesized using the proposed APPJ treatment achieve low leakage current (on the order of 10 A/cm) and high Young's modulus (12 GPa), outperforming the control sample synthesized without plasma treatment. The dielectric constant of our zeolite thin films was as low as 1.41. The overall performance of the low-k thin films synthesized with the APPJ treatment far exceed existing low-k films comprising pure-silica MFI.

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Section: Introductionmentioning

confidence: 99%

Atmospheric Pressure Plasma Jet-Assisted Synthesis of Zeolite-Based Low-k Thin Films

Kai-yu¹,

Chi²,

Kao³

et al. 2017

ACS Appl. Mater. Interfaces

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“…After silylation, a dielectric constant of 2.1 was obtained; this value changes slightly over time upon exposure to air. Interestingly, this post-curing treatment step can be eliminated if the silylation is performed during the zeolite synthesis and/or during calcination of the template [139].…”

Section: Silica Zeolitesmentioning

confidence: 99%

Low‐kMaterials: Recent Advances

Dubois¹,

Volksen²

2012

Advanced Interconnects for ULSI Technology

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“…However, the previously reported zeolite film fabrication techniques have limitations for low‐ k applications. Two different processes have been previously used to prepare low‐ k zeolite films: in situ crystallization and spin‐on deposition of zeolite crystals. In situ crystallization allows for the fabrication of high mechanical strength zeolite films.…”

Section: Introductionmentioning

confidence: 99%

Sub‐Micrometer Zeolite Films on Gold‐Coated Silicon Wafers with Single‐Crystal‐Like Dielectric Constant and Elastic Modulus

Tiriolo

Rangnekar

Zhang

et al. 2017

Adv Funct Materials

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A low-temperature synthesis coupled with mild activation produces zeolite films exhibiting low dielectric constant (low-k) matching the theoretically predicted and experimentally measured values for single crystals. This synthesis and activation method allows for the fabrication of a device consisting of a b-oriented film of the pure-silica zeolite MFI (silicalite-1) supported on a gold-coated silicon wafer. The zeolite seeds are assembled by a manual assembly process and subjected to optimized secondary growth conditions that do not cause corrosion of the gold underlayer, while strongly promoting in-plane growth. The traditional calcination process is replaced with a nonthermal photochemical activation to ensure preservation of an intact gold layer. The dielectric constant (k), obtained through measurement of electrical capacitance in a metal-insulator-metal configuration, highlights the ultralow k ≈ 1.7 of the synthetized films, which is among the lowest values reported for an MFI film. There is large improvement in elastic modulus of the film (E ≈ 54 GPa) over previous reports, potentially allowing for integration into silicon wafer processing technology.

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Hydrofluoric-Acid-Resistant and Hydrophobic Pure-Silica-Zeolite MEL Low-Dielectric-Constant Films

Cited by 18 publications

References 56 publications

Atmospheric Pressure Plasma Jet-Assisted Synthesis of Zeolite-Based Low-k Thin Films

Atmospheric Pressure Plasma Jet-Assisted Synthesis of Zeolite-Based Low-k Thin Films

Low‐kMaterials: Recent Advances

Sub‐Micrometer Zeolite Films on Gold‐Coated Silicon Wafers with Single‐Crystal‐Like Dielectric Constant and Elastic Modulus

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