Hydrogen adsorption on GaAs (001) reconstructions

Hicks, Robert F.; Qi, Haihua; Fu, Quanhong; Han, B.-K.; Li, L.

doi:10.1063/1.478980

Cited by 11 publications

(15 citation statements)

References 78 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…9 After growth, samples were transferred directly into an ultrahigh vacuum (UHV) chamber with a base pressure of 2.0 × 10 -10 torr. The GaAs(001) crystals were annealed at 793 K for 30 min to obtain a clean and well-ordered gallium-rich (4 × 2)/c(8 × 2) reconstruction, as verified by low-energy electron diffraction.…”

Section: Experimental and Theoretical Methodsmentioning

confidence: 99%

“…6,8,9,28 The relatively intense band at 2135 cm -1 can be attributed to molecularly adsorbed arsine. Gasphase AsH 3 exhibits asymmetric and symmetric stretching modes at 2123 and 2116 cm -1 , respectively.…”

Section: Arsine Adsorption At 297 Kmentioning

confidence: 99%

“…The film surface plays a crucial role in this process, because it mediates the decomposition of the group III and group V reagents. [4][5][6][7][8][9][10][11][12][13] It is essential to understand the heterogeneous decomposition reactions because they affect the growth rate, film composition, film morphology, and dopant profiles, all of which impact device performance.…”

Section: Introductionmentioning

confidence: 99%

“…The active layers in these devices are grown on the (001) plane of gallium arsenide by metalorganic vapor-phase epitaxy (MOVPE). [1][2][3][4][5][6][7][8][9][10] In this process, volatile precursors of the group III and group V elements in a hydrogen carrier gas are fed into a reactor containing a substrate heated to between 773 and 923 K. [1][2][3] The precursors adsorb and decompose on the wafer surface, depositing a single-crystal film that is lattice-matched to the GaAs substrate. The film surface plays a crucial role in this process, because it mediates the decomposition of the group III and group V reagents.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Mechanism of Arsine Adsorption on the Gallium-Rich GaAs(001)−(4 × 2) Surface

Lian

et al. 2000

J. Phys. Chem. B

View full text Add to dashboard Cite

The kinetics and mechanism of arsine adsorption on the (4 × 2) surface of gallium arsenide (001) has been studied by scanning tunneling microscopy, infrared spectroscopy, and ab initio quantum chemistry calculations. Arsine forms a dative bond to a gallium dimer. Then, this species either desorbs from the surface or decomposes to an AsH 2 or AsH fragment with hydrogen transfer to an arsenic site. Finally, desorption of hydrogen leaves arsenic dimers on the surface. The energy barriers for arsine desorption and dissociation into AsH 2 are estimated to be 9.3 and 16.5 kcal/mol, respectively. Gallium hydride is not produced upon dissociation of AsH 3 because this process is not energetically favorable.

show abstract

Section: Experimental and Theoretical Methodsmentioning

confidence: 99%

Section: Arsine Adsorption At 297 Kmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Mechanism of Arsine Adsorption on the Gallium-Rich GaAs(001)−(4 × 2) Surface

Lian

et al. 2000

J. Phys. Chem. B

View full text Add to dashboard Cite

show abstract

“…The samples were transferred to the UHV cluster tool via a vacuum interface chamber. Details of this system have been described elsewhere [7].…”

Section: Experimental Methodsmentioning

confidence: 99%

Phase transitions of III–V compound semiconductor surfaces in the MOVPE environment

Begarney

et al. 2001

Journal of Crystal Growth

Self Cite

View full text Add to dashboard Cite

The structure of gallium arsenide and indium phosphide (0 0 1) surfaces in the metalorganic vapor-phase epitaxy (MOVPE) environment has been investigated. During growth at V/III ratios in excess of 10, both materials are terminated with group V ad-dimers (As or P), alkyl groups and hydrogen atoms. These species sit on top of a complete layer of the group V atoms. As the V/III ratio decreases, the top layer of arsenic or phosphorous desorbs from the surface. However, the resulting structures are different on GaAs and InP (0 0 1). In the former case, the phase transition occurs with gallium out-diffusion and nucleation of elongated islands. These islands have a b2(2 Â 4) structure that contains only 0.75 monolayer of arsenic dimers. The resulting surface is rough, exposing on average six atomic layers. Conversely, on InP (0 0 1), no indium out-diffusion occurs following desorption of the phosphorous ad-dimers. Instead, the underlying P atoms dimerize, forming a (2 Â 1) structure with a phosphorous coverage of 1.0 monolayer. # 2001 Elsevier Science B.V. All rights reserved.

show abstract

Reflection Absorption IR Spectroscopy (RAIRS)

Hinrichs

2011

Surface and Thin Film Analysis

View full text Add to dashboard Cite

Refl ection absorption infrared spectroscopy ( RAIRS ) is a well -established vibrational spectroscopic method that is frequently applied within the research areas of chemistry, physics, and biology [1 -34] . The technique is used to identify and characterize the chemical state, molecular structure, anisotropy, and conductivity of thin fi lms adsorbed onto metallic and nonmetallic surfaces. Vibrational spectra are used as characteristic fi ngerprints for adsorbate molecules, adsorption confi gurations, and structures. The method is also referred to as different acronyms, including RAIRS, FT -IRAS, IRRAS, and ERIRS ( external refl ection infrared spectroscopy ), all of which refer to the same principle of measurement using IR radiation and a refl ection absorption geometry. Typically, this technique involves a single external refl ection at a sample covered substrate. The sample absorbs radiation at material specifi c frequencies of free carriers, electronic transitions, or vibrational bands, and a corresponding absorption occurs in the spectrum of the refl ected radiation. For this technique, substrates are chosen that do not produce disturbing absorption bands in the spectral range of interest. 23

show abstract

Hydrogen adsorption on GaAs (001) reconstructions

Cited by 11 publications

References 78 publications

Mechanism of Arsine Adsorption on the Gallium-Rich GaAs(001)−(4 × 2) Surface

Mechanism of Arsine Adsorption on the Gallium-Rich GaAs(001)−(4 × 2) Surface

Phase transitions of III–V compound semiconductor surfaces in the MOVPE environment

Reflection Absorption IR Spectroscopy (RAIRS)

Contact Info

Product

Resources

About