Hydrogen adsorption on phosphorus-rich<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mo>(</mml:mo><mml:mn>2</mml:mn><mml:mn /><mml:mo>×</mml:mo><mml:mn>1</mml:mn><mml:mo>)</mml:mo></mml:math>indium phosphide (001)

Fu, Qiang; Negro, Enrico; Chen, G.; Law, D. C.; Li, C. H.; Hicks, Robert F.; Raghavachari, Krishnan

doi:10.1103/physrevb.65.075318

Cited by 29 publications

(21 citation statements)

References 33 publications

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“…The assignment of the two peaks is also supported by a cluster calculation published earlier by the Hicks group. 14 We attribute three positive peaks to metastable transition states ͑atomic structures͒ that are being formed upon exposure to atomic hydrogen. In the absence of further side reactions the latter peaks should disappear upon further exposure to atomic hydrogen with only the two expected positive peaks remaining.…”

Section: Resultsmentioning

confidence: 99%

Experimental and theoretical evidence for a hydrogen stabilizedc(2×2)reconstruction of the P-rich InP(001) surface

et al. 2006

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The formation of hydrogen bonds was investigated on the P-rich InP͑001͒ surface employing attenuated total-reflection Fourier-transform infrared spectroscopy, low-energy electron diffraction, and total-energy density-functional theory calculations. Strong evidence was found for a c͑2 ϫ 2͒-2P-3H reconstruction with a higher hydrogen coverage than is characteristic for the metal-organic chemical-vapor deposition prepared hydrogen-stabilized ͑2 ϫ 2͒-2D-2H surface. The new surface reconstruction was formed upon exposure to atomic hydrogen. Complete transformation of all the metastable atomic configurations to form the new surface reconstruction was not achieved, since prior to this the surface began to deteriorate. The latter effect was monitored as the formation of In-H bonds. Two observations, i.e., nearly complete screening of the infrared peaks for excitation with p-polarized light and a pronounced redshift of P-H peaks with increasing hydrogen coverage were attributed to dipole-dipole interaction between the vibrating adsorbates.

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Section: Resultsmentioning

confidence: 99%

Experimental and theoretical evidence for a hydrogen stabilizedc(2×2)reconstruction of the P-rich InP(001) surface

et al. 2006

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“…Such di-hydride complexes could be found both in cation vacancies and at internal surfaces. 27,28 At the same time, this di-hydride dipole could be isotropically oriented, with equal contributions along all axes ͑x , y , z͒, because it is not located on a particular surface.…”

Section: Discussionmentioning

confidence: 99%

Spectroscopic studies of the mechanism for hydrogen-induced exfoliation of InP

et al. 2005

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The motion and bonding configurations of hydrogen in InP are studied after proton implantation and subsequent annealing, using Fourier transform infrared ͑FTIR͒ spectroscopy. It is demonstrated that, as implanted, hydrogen is distributed predominantly in isolated pointlike configurations with a smaller concentration of extended defects with uncompensated dangling bonds. During annealing, the bonded hydrogen is released from point defects and is recaptured at the peak of the distribution by free internal surfaces in di-hydride configurations. At higher temperatures, immediately preceding exfoliation, rearrangement processes lead to the formation of hydrogen clusters and molecules. Reported results demonstrate that the exfoliation dynamics of hydrogen in InP and Si are markedly different, due to the higher mobility of hydrogen in InP and different implant-defect characteristics, leading to fundamental differences in the chemical mechanism for exfoliation.

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“…[33][34][35][36][37][38][39][40] and Table III. [41][42][43][44] The most intense peaks are marked with a star symbol. The multiphonon vibrations of InP are present at 720 cm )1 , 742 cm )1 , 777 cm )1 , 808 cm )1 , 840 cm )1 , 937 cm )1 , 963 cm )1 , 998 cm )1 , and 1,025 cm )1 , within the entire spectral region from 700 cm )1 to 4,000 cm )1 .…”

Section: Methodsmentioning

confidence: 99%

“…The intensity of the peak at 2,312 cm )1 was the same in both the p-and s-polarized spectra, indicating that the P-H stretch mode has a preferred in-plane orientation. 44 Additionally, there was no Ga or As-related hydride peaks observed. The H-related peaks, not shown, exhibit a similar behavior for all of the samples including samples 1-3.…”

Section: Oxide and Hydride Formationmentioning

confidence: 97%

“…The as-received InP wafers, which P-H stretch 43,44 received no treatments whatsoever, possessed an RMS roughness of 0.24 ± 0.01 nm averaged over several 10 · 10 lm 2 scans. After the 5% HF in DI water or HF:ethanol (1:9) treatments for 20 min, the measured RMS roughness was 0.24 ± 0.01 nm or 0.23 ± 0.01 nm, respectively.…”

Section: Surface Morphology and Bond Strengthmentioning

confidence: 99%

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Interfacial Chemistry of InP/GaAs Bonded Pairs

Liu

Kuech

2007

Journal of Elec Materi

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The interfacial chemistry of InP/GaAs direct bonding with either 5% HF in water or HF:ethanol (1:9) chemical pretreatments was investigated. Multiple internal transmission-Fourier transform infrared spectroscopy (MIT-FTIR) and atomic force microscopy (AFM) were used to probe the bonding interface. The bond strength was measured as a function of annealing conditions and prebonding chemical treatment. The HF-based pretreatments remove the initial native oxide, leaving an interfacial layer of either water or ethanol. The initial room-temperature bond strength is primarily determined by the strength of hydrogen bonding, which, in turn, is a function of the prebonding treatment. The removal of interfacial water and ethanol, and with the subsequent formation of the oxide layer, leads to an increased bond strength. For ethanol-based HF treatments, ethanol appears to react with the underlying interfacial oxide layer through a complex interaction with the absorbed water. After annealing, the bond strength for all prebonding preparations can reach a high value, comparable to the fracture strength of the InP. The oxide composition after thermal annealing shifts from In 2 O 3 to the eventual thermodynamic equilibrium product, InPO 4 .

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Hydrogen adsorption on phosphorus-rich(2×1)indium phosphide (001)

Cited by 29 publications

References 33 publications

Experimental and theoretical evidence for a hydrogen stabilizedc(2×2)reconstruction of the P-rich InP(001) surface

Experimental and theoretical evidence for a hydrogen stabilizedc(2×2)reconstruction of the P-rich InP(001) surface

Spectroscopic studies of the mechanism for hydrogen-induced exfoliation of InP

Interfacial Chemistry of InP/GaAs Bonded Pairs

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