Spectroscopic studies of the mechanism for hydrogen-induced exfoliation of InP

Abstract

The motion and bonding configurations of hydrogen in InP are studied after proton implantation and subsequent annealing, using Fourier transform infrared ͑FTIR͒ spectroscopy. It is demonstrated that, as implanted, hydrogen is distributed predominantly in isolated pointlike configurations with a smaller concentration of extended defects with uncompensated dangling bonds. During annealing, the bonded hydrogen is released from point defects and is recaptured at the peak of the distribution by free internal surfaces in di-hydride configurations. At higher temperatures, immediately preceding exfoliation, rearrangement processes lead to the formation of hydrogen clusters and molecules. Reported results demonstrate that the exfoliation dynamics of hydrogen in InP and Si are markedly different, due to the higher mobility of hydrogen in InP and different implant-defect characteristics, leading to fundamental differences in the chemical mechanism for exfoliation.

Role of hydrogen in hydrogen-induced layer exfoliation of germanium

“…This shoulder encompasses the reported values of 1978 cm −1 for the Ge͑111͒ surface mono-hydride. 9 Thus, these data provide evidence of the presence of ͑100͒ and ͑111͒ internal surfaces at 501°C.…”

“…In the same sample and following exfoliation at 399°C, there is a broad tail toward 1950 cm −1 that is consistent with the presence of Ge͑111͒ surface monohydride modes. 9 The mechanism described above is similar to the case of silicon, but there are some differences. In both cases there is a formation and transformation of hydrogenated vacancy species into extended internal surfaces.…”

“…[2][3][4][5][6] The mechanism of H-induced exfoliation has been extensively studied in the case of silicon, 7,8 and, more recently, in the case of InP. 9 The early work of Weldon et al provided important conclusions: ͑i͒ implantation induced defects serve to trap H within the Si substrate. ͑ii͒ A broad distribution of vacancy hydrogen defect structures is the main reservoir for hydrogen that contribute to the exfoliation process.…”

InP Layer Transfer with Masked Implantation

“…However, to exfoliate an implanted InP layer using the ion-cut method, it is generally necessary to implant hydrogen ions at a high dosage of several times 10 16 /cm 2 into the semiconductor donor. 5 Due to such high concentrations, the transferred layers suffer from implantation-induced damage, which cannot be easily remedied even through high-temperature thermal annealing beyond 600°C, at which point InP decomposes through the preferential evaporation of phosphorus. 3,6 Additional processing complications required for annealing above 600°C are the use of a capping layer or high phosphorus overpressure.…”

Experimental elucidation of vacancy complexes associated with hydrogen ion-induced splitting of bulk GaN

“…8-10 A few works have also reported on this phenomenon in some conventional compound semiconductors. [11][12][13] Techniques such as vibrational spectroscopies, [14][15][16][17][18][19] transmission electron microscopy, 10,20 Rutherford backscattering spectrometry in the channeling mode, [21][22][23] x-ray diffraction, 24 and positron annihilation spectroscopy 22,25 improved greatly our understanding of the microscopic mechanisms of the ion-cut process ͑particularly in Si͒. These studies have demonstrated the critical role of H-vacancy ͑H-V͒ complexes and damage-generated stress in the formation of nanoscopic platelets and voids immediately after implantation.…”