Hydrogen atom assisted ALE of silicon

Imai, Satomitsu; Matsumura, Masakiyo

doi:10.1016/0169-4332(94)90235-6

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Extension Of Ale To Group IV Semiconductors2

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1996

2002

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Cited by 9 publications

(2 citation statements)

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“…117 Alternative chemistries using H at to reduce the surface Cl layer have been explored by us 119 and others. 120 Chemical free energy is delivered by H at , and all the of the discussion of section III should be considered. We believe that H at induces mixing in the near surface region, making this chemistry incompatible with abrupt interfaces or dopant profiles, which are primary goals in Si ALE.…”

Section: Extension Of Ale To Group IV Semiconductorsmentioning

confidence: 99%

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Surface Chemistry in the Chemical Vapor Deposition of Electronic Materials

Gates¹

1996

Chem. Rev.

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Section: Extension Of Ale To Group IV Semiconductorsmentioning

confidence: 99%

“…Alternative chemistries using H at to reduce the surface Cl layer have been explored by us and others . Chemical free energy is delivered by H at , and all the of the discussion of section III should be considered.…”

Section: Extension Of Ale To Group IV Semiconductorsmentioning

confidence: 99%