Hydrogen Atom Doping—A Versatile Method for Modulated Interface Resistive Switching

Abstract

Interface kinetics plays a crucial role in modulating the resistive switching mechanism for memristor devices with a Schottky junction. This study introduces H atoms by catalytic doping and examines the interfacial electrical transfer characteristics of the Pd/Nb‐doped SrTiO3 (Nb‐STO). The I–V measurements show that H+ doping at the Pd/Nb‐STO interface reduces the barrier height by 300 mV compared to the sample before H+ doping. This reduction in barrier height is further correlated with the decrease in built‐in potential by 300 mV and depletion layer thickness from C–V measurements. The underlying reason for such a drastic change in resistive switching characteristics is the reduction of interface layer thickness. The work highlights the easy use of Pd metal to introduce H atoms to oxide materials and provides insight into their effects on switching mechanisms.

Nanosecond Memristor Based on Oxygen Vacancy Engineering in SrTiO3 Single Crystal

“…In fact, the Schottky barrier height Φ B can be deduced from I‐V hysteresis. At low forward bias, from thermionic emission theory [43] using Equation 1: $$$\vcenter{\openup.5em\halign{$\displaystyle{#}$\cr I = A_{{\rm{eff}}} A{^\ast} T^2 \exp ({{ - q\varphi _B } \over {k_B T}})\exp ({{qV} \over {nk_B T}})\hfill\cr}}$$$ …”

“…In fact, the Schottky barrier height Φ B can be deduced from I-V hysteresis. At low forward bias, from thermionic emission theory [43] using Equation (1):…”