Nanosecond Memristor Based on Oxygen Vacancy Engineering in SrTiO₃ Single Crystal

Abstract

Memristors are of great significance for the construction of memory devices and neuromorphological computing, which need a fast response time for ultrahigh data storage, ultrafast information processing, and efficient neuromorphic computing. Currently, memristors based on perovskite oxide materials generally have a long response time. In this paper, the electroforming-free memristive behavior based on Ar + irradiating induced oxygen vacancy modulation in SrTiO 3 (STO) has been investigated. The Ag/ STO/(Ta/Pt) device shows a stable bipolar resistive switching (RS) characteristic and can realize ultrafast multi-resistance switching behavior. More importantly, its conductance can be continuously controlled with short pulse on the nanosecond scale to simulate potentiation and depression of synapse, promising potential application in ultra-fast biological synapse and high-efficiency training of neural networks. More importantly, the defect engineering strategy used in this work provides more freedom for the design and optimization of versatile memristor devices.