Hydrogen blistering of silicon: Progress in fundamental understanding

Terreault, B.

doi:10.1002/pssa.200622520

Cited by 119 publications

(111 citation statements)

References 129 publications

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“…In the narrow region with high concentration of H and He, gas-vacancy complexes and small cavities readily form during implantation. [27][28][29][30] The local consumption of vacancies also avoids interstitials annihilation which, in turn, can be stabilized by H up to high temperature. 30 Hydrogen also forms a weakly bonded structure at the bond centered ͑BC͒ and antibonding ͑AB͒ site of the Si lattice.…”

Section: ͑2͒mentioning

confidence: 99%

On the microstructure of Si coimplanted with H+ and He+ ions at moderate energies

Reboh

Schaurich

Declémy

et al. 2010

Journal of Applied Physics

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Mechanism of the Smart Cut™ layer transfer in silicon by hydrogen and helium coimplantation in the medium dose range J. Appl. Phys. 97, 083527 (2005) We report on the microstructure of silicon coimplanted with hydrogen and helium ions at moderate energies. X-ray diffraction investigations in as-implanted samples show the direct correlation between the lattice strain and implanted ion depth profiles. The measured strain is examined in the framework of solid mechanics and its physical origin is discussed. The microstructure evolution of the samples subjected to intermediate temperature annealing ͑350°C͒ is elucidated through transmission electron microscopy. Gas-filled cavities in the form of nanocracks and spherical bubbles appear at different relative concentration, size, and depth location, depending on the total fluence. These different microstructure evolutions are connected with the surface exfoliation behavior of samples annealed at high temperature ͑700°C͒, determining the optimal conditions for thick layer transfer. 1.5 m thick Si films are then obtained onto glass substrates.

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Section: ͑2͒mentioning

confidence: 99%

On the microstructure of Si coimplanted with H+ and He+ ions at moderate energies

Reboh

Schaurich

Declémy

et al. 2010

Journal of Applied Physics

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“…As the thermal annealing temperature increases, the hydrogen filled microcavities keep growing. 24,25 Subsequent annealing and a combination of the buildup of internal gas pressure in the cavities and the growth of the micro-cavities leads to layer splitting by micro-crack propagation. Moutanabbir et al, (2010a) 26 concluded that thermoevolution of defects in H implanted and annealed freestanding GaN under ion-cut conditions revealed nanobubbles of 1-2 nm in diameter formation around the damage band.…”

Section: Resultsmentioning

confidence: 99%

Effect of Hydrogen Implantation on the Mechanical Properties of AlN throughout Ion-Induced Splitting

Mamun

Tapily

Moutanabbir

et al. 2018

ECS J. Solid State Sci. Technol.

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The ability to transfer bulk quality III-N thin layers onto foreign platforms is a powerful strategy to enable high-efficiency and low-cost optoelectronic devices. Ion-cut using sub-surface defect engineering has been an effective process to split and transfer a variety of semiconductors. With this perspective, hydrogen-implanted AlN samples were annealed in air at temperatures ranging from 300 • C to 600 • C for 5 min to study the influence of pre-layer splitting treatments on the nanomechanical properties. There is a clear dependence of the hardness on implanted hydrogen implantation fluence. We observe that the as-implanted hardness increased from 18 GPa for the virgin reference sample to ∼25 GPa for the highest fluence of 3 × 10 17 H cm −2 prior to annealing. In the case of reference single crystalline Si samples, a significant drop in the hardness and elastic modulus is observed in the H implantation-induced damage zone subsequent to thermal annealing , while for crystalline epitaxial AlN samples with 0.5 × 10 17 and 2.0 × 10 17 H implant fluences, the hardness increases and peaks until the thermal annealing temperature reaches 350 • C and subsequently begins to drop thereafter for higher annealing temperatures. However, for the 1.0 × 10 17 H implantation fluence the hardness continues to increase with increasing thermal annealing temperature. The remarkable growth in the optoelectronic industry is attributed to group III-nitride compound semiconductors such as GaN, AlN, and InN. [1][2][3][4][5][6] Due to the wide bandgap nature and the piezoelectric properties of AlN and GaN 7,8 and the high electron mobility and small bandgap of InN, 9 significant interest in the fabrication of these materials is palpable.The exploitation of the full potential of the group III-nitride compound semiconductors in the emerging optoelectronic technologies such as deep ultraviolet DUV light emitting diodes LEDs, surface acoustic wave sensors (SAWs), RF filters in MEMS technologies etc., faces major challenges namely the lack of or the high cost of high crystalline quality material. Although bulk group III-nitride wafers are excessively expensive, only 2-4 inch bulk GaN wafers are commercially available. In general, due to its high thermal stability, single crystal sapphire substrates are used for the epitaxial growth of group III-nitride layers. Due to lattice and thermal mismatch between the III-N semiconductor materials and growth on substrates such as sapphire, it is documented that the grown layers tend to be defective with misfit dislocations. Reducing interfacial defect density requires the growth of very thick layers which is a very lengthy process. Bulk wafers are obtained from these thick layers. In order to reduce the cost of these bulk materials one approach would be to implement the ion-cut process. [10][11][12] The ion-cut process, which is based on ion (H and/or He) implantation and wafer bonding, is used to transfer crystalline layers onto substrates that produce heterostructures that cannot be produced by other...

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“…This result makes it possible to presume that the formation of the observed cone-shape inclusions is related to the presence of mechanical stresses in the near-surface region of wafer. According to [2], the annealing of the wafers implanted by light ions (hydrogen, helium) can significantly modify the structure of the R p thick near-surface region due to the development of the buried defect layer created by implantation. In particular, a system of defects normal to the surface may be formed due to the propagation of defects created in the buried helium-containing layer [3].…”

Section: Resultsmentioning

confidence: 99%

Formation of Cone-Shaped Inclusions and Line Defects on the Cz-Si Wafer Surface by the Helium Implantation and DC Nitrogen Plasma Treatment

et al. 2011

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The general goal of this work is to investigate the defects formed on the surface of the Cz-Si wafers subjected to helium implantation, vacuum annealing and nitrogen plasma treatment. The performed scanning electron microscopy study has shown that in the general case two types of surface defects can be formed: cone-shaped inclusions with the base diameter of 0.2-2 µm and the ratio of diameter to height of approximately 1:1, as well as crystallographically oriented line defects with the length equal to 0.2-2 µm. The concentration of these defects depends on the conditions of implantation and plasma treatment.

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Hydrogen blistering of silicon: Progress in fundamental understanding

Cited by 119 publications

References 129 publications

On the microstructure of Si coimplanted with H+ and He+ ions at moderate energies

On the microstructure of Si coimplanted with H+ and He+ ions at moderate energies

Effect of Hydrogen Implantation on the Mechanical Properties of AlN throughout Ion-Induced Splitting

Formation of Cone-Shaped Inclusions and Line Defects on the Cz-Si Wafer Surface by the Helium Implantation and DC Nitrogen Plasma Treatment

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