Hydrogen Can Passivate Carbon Impurities in Mg-Doped GaN

Abstract

The effect of unintentionally doped hydrogen on the properties of Mg-doped p-GaN samples grown via metalorganic chemical vapor deposition (MOCVD) is investigated through room temperature photoluminescence (PL) and Hall and secondary ion mass spectroscopy (SIMS) measurements. It is found that there is an interaction between the residual hydrogen and carbon impurities. An increase of the carbon doping concentration can increase resistivity of the p-GaN and weaken blue luminescence (BL) band intensity. However, when hydrogen incorporation increased with carbon doping concentration, the increase of resistivity caused by carbon impurity is weaken and the BL band intensity is enhanced. This suggests that the co-doped hydrogen not only passivate Mg Ga , but also can passivate carbon impurities in Mg-doped p-GaN.

Excavating the Communication Performance in GaN‐Based Green Micro‐LEDs: Modular‐Architectured p‐Type Region

“…However, even to date, high-efficiency ptype doping in III-nitrides has always been treated as the most bottleneck issue in the field. [15,16] To enhance the acceptor activation, a series of methods have been proposed, such as co-doping, [17][18][19] delta doping, [20][21][22][23] polarization-induced doping, [24][25][26][27][28] superlattice (SL) doping, [29][30][31][32] tunnel junction, [33][34][35][36] Mg-doped AlGaN/GaN quantum dots, [37] and so on. Among them, polarization-induced doping and SLs doping effectively increase hole concentration by fully employing the polarization field engineering, which compensates part of p-dopant activation energy, therefore showing unique prospective for III-nitride optoelectronic devices.…”