Hydrogen-decorated lattice defects in proton implanted GaN

Weinstein, M.G.; Song, Chunying; Stavola, Michael; Pearton, S. J.; Wilson, R. G.; Shul, R. J.; Killeen, Kevin; Ludowise, M. J.

doi:10.1063/1.121157

Cited by 52 publications

(29 citation statements)

References 21 publications

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“…[81,87] Optical absorption measurements using Fourier transform infrared (FTIR) spectroscopy have been used to detect V Ga -H complexes in GaN crystals grown by the ammonothermal method [43,44,89] and in proton irradiated GaN films. [97,98] The absorbance of semiconductor material in the near infrared range is governed by the free carrier absorption, which can be modeled with the Drude model. [99,100] Using free carrier absorption obtained with the Drude model it is possible to determine the absolute absorption coefficients of peaks present in the spectra.…”

Section: Optical Absorption Measurements Of V Ga -Hmentioning

confidence: 99%

Defects in Single Crystalline Ammonothermal Gallium Nitride

Suihkonen

Pimputkar

Sintonen

et al. 2017

Adv Elect Materials

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Native bulk gallium nitride (GaN) has emerged as an alternative for sapphire and silicon as a substrate material for III‐N devices. While quasi‐bulk GaN substrates are currently commercially available, single crystal GaN substrates are considered essential for future high performance light emitters and power devices. The ammonothermal method is currently considered one of the most feasible methods to grow large truly bulk crystals of GaN at low cost and high structural quality. High crystalline quality GaN substrates sliced from ammonothermally grown crystals have been demonstrated and utilized in homoepitaxy for III‐N devices. However, despite the high crystalline quality the properties of as‐grown ammonothermal GaN crystals and substrates are affected by the presence of impurities and other defects that hinder their use for device applications. Here, the main developments of ammonothermal growth of GaN and the effects of impurities, native point defects, and dislocations on the material properties are summarized. Additionally, measurement techniques that enable the evaluation of point defect concentration and low dislocation density distribution over a large area on bulk GaN substrates are reviewed.

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Section: Optical Absorption Measurements Of V Ga -Hmentioning

confidence: 99%

Defects in Single Crystalline Ammonothermal Gallium Nitride

Suihkonen

Pimputkar

Sintonen

et al. 2017

Adv Elect Materials

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“…5, and at 2364 and 2386 cm -1 for 2 H. These absorptions are ascribed to N-H centers, based both on comparisons with materials known to contain N-H and on the size of the departure of the isotope shift from √2. The frequencies lie above those reported when the concentration of implanted H is ∧0.1 at.% [2], a regime where we did not observe bubble formation and the H is believed bound to defects. Moreover, the integrated strength of the absorptions in walls.…”

Section: H 2 Bubble Formation With Wall Chemisorption Of H At Implantmentioning

confidence: 67%

“…The detected H site is believed to be defect related, since the amplitude of the channeling peak rises markedly during initial impingement of the 3 He analysis beam, and rises more rapidly when that beam is tilted from the channeling orientation so that more atomic displacements are produced. Numerical simulations of the channeling indicate that the narrow peak in the nuclear-reaction yield can be produced only by 2 H that is displaced into the central region of the open [0001] channel [4]. During a succession of 1-hour anneals at increasing temperature, this peak remained essentially unchanged after 411ºC, but decreased in amplitude with increasing temperature from 511ºC upward, becoming poorly resolved by 809ºC.…”

Section: Bubble-related Defect Microstructure and Its Evolution With mentioning

confidence: 99%

“…Previously, 1 H implanted to similar concentrations in GaN was found by IR spectroscopy to have local vibrational modes in the frequency range 2983-3150 cm -1 [2]. These modes were assigned with confidence to N-H centers, which were plausibly hypothesized to be located in the Ga vacancy.…”

Section: Bubble-related Defect Microstructure and Its Evolution With mentioning

confidence: 99%

“…This work was undertaken for two reasons: first, the behavior of the implanted system provides information on a range of fundamental atomic processes involving H and defects; in addition, H implantation may ultimately be used in device processing for purposes such as electrical isolation and controlled separation of layers. This work builds upon several prior studies of implanted H in GaN [1][2][3].…”

Section: Introductionmentioning

confidence: 99%

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The Behavior of Ion-Implanted Hydrogen in Gallium Nitride

Myers

Headley

Hills

et al. 1999

MRS Internet j. nitride semicond. res.

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Hydrogen was ion-implanted into wurtzite-phase GaN, and its transport, bound states, and microstructural effects during annealing up to 980ºC were investigated by nuclear-reaction profiling, ion-channeling analysis, transmission electron microscopy, and infrared (IR) vibrational spectroscopy. At implanted concentrations ∨1 at.%, faceted H 2 bubbles formed, enabling identification of energetically preferred surfaces, examination of passivating N-H states on these surfaces, and determination of the diffusivity-solubility product of the H. Additionally, the formation and evolution of point and extended defects arising from implantation and bubble formation were characterized. At implanted H concentrations ∧0.1 at.%, bubble formation was not observed, and ion-channeling analysis indicated a defect-related H site located within the [0001] channel.

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Local vibrational modes and compensation effects in Mg‐doped GaN

Hoffmann

Kaschner

Thomsen

2003

phys. stat. sol. (c)

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The compensation and self-compensation effects in Mg-doped GaN is studied by low-temperature photoluminescence and Raman spectroscopy using a series of samples with different Mg concentrations. Strongly doped samples are found to be highly compensated in electrical measurement. The compensation mechanism is directly related to the incorporation of Mg leading to the additional formation of three different deep donor levels. Furthermore, hydrogen forms defect complexes with Mg and compensates the acceptor states. These complexes were observed as local vibrational modes in Raman spectra in the range of 2200 cm -1. The direct incorporation of Mg can be controlled by local vibrational modes in the region of GaN host phonons. Investigating the intensity dependence of the different Mg-H complexes and the LVM of activated Mg the Raman spectra give a clear direct evidence of the degree of compensation and pconductivity.

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Hydrogen-decorated lattice defects in proton implanted GaN

Cited by 52 publications

References 21 publications

Defects in Single Crystalline Ammonothermal Gallium Nitride

Defects in Single Crystalline Ammonothermal Gallium Nitride

The Behavior of Ion-Implanted Hydrogen in Gallium Nitride

Local vibrational modes and compensation effects in Mg‐doped GaN

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