Hydrogen decoration of radiation damage induced defect structures

Kirnstötter, Stefan; Faccinelli, Martin; Schustereder, Werner; Laven, Johannes G.; Schulze, Hans‐Joachim; Hadley, P.

doi:10.1063/1.4865603

Cited by 4 publications

(3 citation statements)

References 11 publications

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“…In the n-doped FZ samples used in the present study, the concentration of these acceptor-type defects was sufficient to invert the conduction type from n-type to p-type. The acceptor-type doping of layer I was experimentally confirmed by a combination of Schottky contacts with EBIC measurements 25 (method described in Ref. 26).…”

Section: Resultsmentioning

confidence: 99%

Activation and Dissociation of Proton-Induced Donor Profiles in Silicon

Laven

Job

Schulze

et al. 2013

ECS J. Solid State Sci. Technol.

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The impact of the thermal budget on the introduction and dissociation of hydrogen-related donor profiles in high purity silicon implanted with protons in the energy range of MeV is investigated. The hydrogen-related donors are radiation-induced defect complexes decorated by the implanted hydrogen. The appearance of the donor profiles is limited to the annealing temperature regime between about 350 °C and 500 °C. The activation of the doping profiles is limited by the diffusion of the implanted hydrogen from the end-of-range region throughout the radiation-induced damage profile. This formation process is adequately described by a diffusion model with an effective activation energy of 1.2 eV. The thermal stability of the hydrogen-related donor profiles is limited by the dissociation of the donors. The deactivation of the doping is modeled by two hydrogen-related donor species with effective dissociation energies of 2.6 eV and 3 eV. The formation and dissociation mechanisms described in the present study define the upper and lower limits of the post-implantation thermal budget, respectively, for a sensible use of proton implantation doping in crystalline silicon.

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Section: Resultsmentioning

confidence: 99%

Activation and Dissociation of Proton-Induced Donor Profiles in Silicon

Laven

Job

Schulze

et al. 2013

ECS J. Solid State Sci. Technol.

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“…A second application of H + implantations is to create regions of ntype doping. H + implantations in the dose range of 10 13 -10 15 H + /cm² and anneals in the temperature range from 350 °C to 550 °C are used to form H-related thermal donor complexes [2,11]. The concentration and type of these thermal donors strongly depend on the annealing temperature and annealing time [12][13][14][15][16] the formation and dissociation process of these donor complexes was investigated in various studies using deep level transient spectroscopy [17], infra-red spectroscopy [18], electron paramagnetic resonance [19] and spreading resistance profiling [20].…”

Section: Introduction Because Protons (H +mentioning

confidence: 99%

High dose proton implantations into silicon: a combined EBIC, SRP and TEM study

Kirnstoetter

Faccinelli

Gspan

et al. 2014

Phys. Status Solidi C

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Proton (H+) implantations are used in power semiconductor devices to introduce recombination centers (Hazdra et al., Microelectron. J. 32(5), 449–456 (2001)) or to form hydrogen related donor complexes (Zohta et al., Jpn. J. Appl. Phys. 10, 532–533 (1991)). Proton implantations are also used in the 'smart cut' process to generate defects that can be used to cleave thin wafers (Romani and Evans, Nucl. Instrum. Methods Phys. Res. B 44, 313–317 (1990)). However, the implantation damage resulting from H+implantations is not completely understood. In this study, protons with energies from 400 keV up to 4 MeV and doses up to 1016 H+/cm² were implanted into highly ohmic boron doped m:Cz silicon (100). Electron Beam Induced Current (EBIC) measurements were performed to locally determine the minority charge carrier diffusion length. The diffusion length decreases with increasing implantation dose and incorporated damage. Spreading Resistance Profiling (SRP) measurements were performed to analyze the charge carrier concentration profiles for different annealing procedures. The electrical activation and growth of the defect complexes varies strongly with the annealing parameters. Transmission Electron Microscopy measurements were made to investigate the microscopic structures formed by the high dose implantation processes. Due to the high local damage density resulting from low energy and high dose H+ implants, platelet structures are formed. During high‐energy high‐dose H+implantations, the implanted hydrogen generates strain in the crystal lattice resulting in changes in the distances between atomic planes. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…Alternative fabrication methods have been tested, where the formation of ntype columns was realized via the implantation of hydrogen ions [4,5]. Although the formation of deep doping profiles due to the implantation of hydrogen [6] is a very useful method, this process is not used because the formation/dissociation [7] and diffusion processes [8] of the hydrogen-related thermal donors are still not well understood and may lead to reliability issues. …”

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confidence: 99%

Depletion of superjunction power MOSFETs visualized by electron beam induced current and voltage contrast measurements

Kirnstoetter

Faccinelli

Jelinek

et al. 2014

Phys. Status Solidi C

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Electron Beam Induced Current (EBIC) measurements were used to produce cross sectional images of superjunction power transistors. These images show how the depletion width expands under reverse bias. Superjunctions are alternating p‐ and n‐type doped vertical columns placed between drain and source in a power transistor (Deboy et al., in: Proc. IEDM, 983–685 (1998); Lorenz et al., in: Proc. PCIM Europe, 250–258 (1998)). These columns allow a higher substrate doping of the drift region, resulting in a lower on‐state resistance while still maintaining a high breakdown voltage. When the device is reverse biased, the space charge region of the superjunction should expand symmetrically due to the homogeneous doping (in the n and p region) until the complete device depletes. The depletion process was also visualized using voltage contrast (VC) measurements. Here the secondary electron signal was detected when the device was reverse biased. We show that EBIC and VC measurements can provide valuable input for process tuning and process simulations, enabling the use of smaller dimensions and higher doping levels

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Hydrogen decoration of radiation damage induced defect structures

Cited by 4 publications

References 11 publications

Activation and Dissociation of Proton-Induced Donor Profiles in Silicon

Activation and Dissociation of Proton-Induced Donor Profiles in Silicon

High dose proton implantations into silicon: a combined EBIC, SRP and TEM study

Depletion of superjunction power MOSFETs visualized by electron beam induced current and voltage contrast measurements

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