Hydrogen diffusion and passivation processes in<i>p</i>- and<i>n</i>-type crystalline silicon

Rizk, R.; Mierry, P. de; Ballutaud, D.; Aucouturier, Marc; Mathiot, D.

doi:10.1103/physrevb.44.6141

Cited by 115 publications

(78 citation statements)

References 45 publications

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“…Alternatively, deactivation of impurity atoms by hydrogen bonding in bulk Si has been known to result in decrease in the carrier concentration by 1-2 orders on magnitude. [19] Since the effective concentration N 0 is smaller for the H-terminated NW, deactivation of dopants is a plausible explanation. Further investigations of the conductance change with the annealing temperature are needed to clarify the origin.…”

Section: Current Calculationsmentioning

confidence: 99%

Nanoscale Characterization of Silicon-On-Insulator Nanowires by Multimode Scanning Probe Microscopy

Bolotov

Tada

Morita

et al. 2013

Trans. Mat. Res. Soc. Japan

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Structural and electronic properties of silicon-on-insulator (SOI) nanowires with a cross section area of 2020 nm 2 were investigated with high spatial resolution by multimode scanning probe microscopy (MSPM) in the constant force mode. The position-dependent tunneling current was measured in the interior of the Si nanowires whose surfaces were terminated with hydrogen and with ultrathin thermal oxide. The current value and fluctuations were reduced for Si nanowires terminated with an ultrathin oxide layer (~0.3 nm), indicating the homogeneous surface passivation. The tunneling current decreased within a distance of ~300 nm from the Si pad electrode for both types of surface termination. Calculations of the tunneling current were performed based on the macroscopic conduction model including the conductance contributions of the nanowire volume and the surface states. In the model, the bulk carrier concentration and the surface state density were tuned to fit the experimental data for the small Si nanowires. The results support the length-dependent conductance of thin Si nanowires, demonstrating the ability of the technique for characterization of modern silicon-on-insulator devices.

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Section: Current Calculationsmentioning

confidence: 99%

Nanoscale Characterization of Silicon-On-Insulator Nanowires by Multimode Scanning Probe Microscopy

Bolotov

Tada

Morita

et al. 2013

Trans. Mat. Res. Soc. Japan

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“…The large scatter in data for diffusion of hydrogen through silicon 148,[196][197][198][199][200][201][202][203][204][205][206][207][208][209][210][211][212][213][214] . We have only plotted data for hydrogen diffusion (no isotopes) and have indicated the type of silicon where known.…”

Section: Noble Gasesmentioning

confidence: 99%

Contributed Review: The feasibility of a fully miniaturized magneto-optical trap for portable ultracold quantum technology

Rushton

Aldous

Himsworth

2014

Review of Scientific Instruments

107

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Experiments using laser cooled atoms and ions show real promise for practical applications in quantumenhanced metrology, timing, navigation, and sensing as well as exotic roles in quantum computing, networking and simulation. The heart of many of these experiments has been translated to microfabricated platforms known as atom chips whose construction readily lend themselves to integration with larger systems and future mass production. To truly make the jump from laboratory demonstrations to practical, rugged devices, the complex surrounding infrastructure (including vacuum systems, optics, and lasers) also needs to be miniaturized and integrated. In this paper we explore the feasibility of applying this approach to the Magneto-Optical Trap; incorporating the vacuum system, atom source and optical geometry into a permanently sealed microlitre system capable of maintaining 10 −10 mbar for more than 1000 days of operation with passive pumping alone. We demonstrate such an engineering challenge is achievable using recent advances in semiconductor microfabrication techniques and materials.PACS numbers: 07.07.Df, 37.10.Gh, 07.30.Kf, I. ULTRACOLD QUANTUM TECHNOLOGYSince the first demonstrations of atoms and ions at sub-millikelvin temperatures in the mid-1980s, the field of atomic physics has been revolutionized by laser cooling and trapping as it provides researchers with a method to probe some of the purest and sensitive quantum systems available. This field is still highly productive and recently has put significant emphasis on the practical applications of this technology beyond the laboratory 1,2 . It was evident very early on that ultracold matter would be an indispensable tool in precise timing applications and a recent demonstration 3 has shown extremely low instabilities at the 10 −18 level. The wavelike nature of atoms as they are cooled to lower temperatures can be used to form atomic interferometers that outperform optical counterparts in measurements of accelerated reference frames 4-7 , which are important for inertial guidance systems, but can also provide sensitive measurements of mass, charge and magnetic fields [8][9][10][11] . Greater sensitivity beyond the classical limit is possible via squeezed 12 and entangled states 13-15 , which are also fundamental attributes for quantum computing 16,17 , and long distance quantum networking 18 . Ultracold matter has been used in the emerging field of quantum simulation 19 and is an indispensable tool in determining fundamental constants 20 , testing general relativity 21 and defining measurement standards 22 . Many researchers and industries believe such tools will be a major part of the 'second quantum revolution' in which the more 'exotic' properties of quantum physics are applied for practical applications 23,24 .The field of ultracold matter has reached a matua) m.d.himsworth@soton.ac.uk rity in both experimental methods and theoretical understanding allowing experiments to begin leaving the laboratory 25-27 . These systems are bespoke, rarely take up a ...

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“…) [3,73], the energy to release hydrogen from a Si H x bond (E HD = 1.1…1.5 eV) [3,74] and also Boltzmann constant (k B ) and temperature (T). Due to saturation of open bonds, the distance between sites (a D ) decreases because less open sites are left [3,73].…”

Section: Hydrogen Diflijsionmentioning

confidence: 99%

Influence of post-hydrogenation upon electrical, optical and structural properties of hydrogen-less sputter-deposited amorphous silicon

Gerke

Becker²,

Rogalla³

et al. 2016

Thin Solid Films

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a b s t r a c t a r t i c l e i n f oAmorphous silicon (a Si) is common in the production of technical devices and can be deposited by several techniques. In this study intrinsic and doped, hydrogen less amorphous silicon films are RF magnetron sputter deposited and post hydrogenated in a remote hydrogen plasma reactor at a temperature of 370°C. Secondary ion mass spectrometry of a boron doped (p) a Si layer shows that the concentration of dopants in the sputtered layer becomes the same as present in the sputter target. Improved surface passivation of phosphorous doped 5 Ω cm, FZ, (n) c Si can be achieved by post hydrogenation yielding a minority carrier lifetime of~360 μs finding an optimum for~40 nm thin films, deposited at 325°C. This relatively low minority carrier lifetime indicates high disorder of the hydrogen less sputter deposited amorphous network. Post hydrogenation leads to a decrease of the number of localized states within the band gap. Optical band gaps (Taucs gab as well as E 04 ) can be determined to~1.88 eV after post hydrogenation. High resolution transmission electron microscopy and optical Raman investigations show that the sputtered layers are amorphous and stay like this during post hydrogenation. As a consequence of the missing hydrogen during deposition, sputtered a Si forms a rough surface compared to CVD a Si. Atomic force microscopy points out that the roughness decreases by up to 25% during post hydrogenation. Nuclear resonant reaction analysis permits the investigation of hydrogen depth profiles and allows determining the diffusion coefficients of several post hydrogenated samples from of a model developed within this work. A dependency of diffusion coefficients on the duration of post hydrogenation indicates trapping diffusion as the main diffusion mechanism. Additional Fourier transform infrared spectroscopy measurements show that hardly any interstitial hydrogen exists in the post hydrogenated a Si layers. The results of this study open the way for further hydrogen diffusion experiments which require an initially unhydrogenated drain layer.

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Hydrogen diffusion and passivation processes inp- andn-type crystalline silicon

Cited by 115 publications

References 45 publications

Nanoscale Characterization of Silicon-On-Insulator Nanowires by Multimode Scanning Probe Microscopy

Nanoscale Characterization of Silicon-On-Insulator Nanowires by Multimode Scanning Probe Microscopy

Contributed Review: The feasibility of a fully miniaturized magneto-optical trap for portable ultracold quantum technology

Influence of post-hydrogenation upon electrical, optical and structural properties of hydrogen-less sputter-deposited amorphous silicon

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