Hydrogen dissociation in the deposition of GaN films with ECR-PECVD process

Fu, Si-Lie; Wang, C. A.; Ding, Laura; Qin, Yiru

doi:10.1007/s12648-017-1142-8

Cited by 2 publications

(1 citation statement)

References 16 publications

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“…The ball and stick model of both molecular targets are shown in figure 1. We decided to look into these two systems due to their potential applications in plasma-processing techniques [8][9][10][11][12][13][14], as well as in other manufacturing approaches where lowenergy electrons are relevant, such as in focused electron beam induced deposition [15,16]. Although the interactions of low-energy electrons with these molecules are important to describe the deposition processes, among others, little to no information about these interactions was found in the literature.…”

Section: Introductionmentioning

confidence: 99%

Elastic cross section data for precursor molecules used in low-temperature plasmas: Sn(CH₃)₄ and Ga(CH₃)₃

Randi,

Moreira,

Bettega

2024

Plasma Sources Sci. Technol.

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Tetramethyltin [Sn(CH3)4] and trimethylgallium [Ga(CH3)3] are important source molecules of Sn and Ga atoms which are used in manufacturing techniques involving low-temperature plasmas. Accurate numerical modeling of plasma environments requires a comprehensive set of electron scattering cross sections by these precursor molecules. Here, we report the elastic integral, differential, and momentum transfer cross sections for electron collisions with Sn(CH3)4 and Ga(CH3)3for energies ranging from 0 to 30 eV. Our calculations were carried out with the Schwinger multichannel method implemented with pseudopotentials and considered two levels of approximation in our calculations, namely static-exchange and static-exchange plus polarization. We identified three shape resonances for Sn(CH3)4 and one clear low-lying resonance for Ga(CH3)3. The low-energy behavior of the s-wave cross section and eigenphase was investigated and, for both molecules, we found evidence of a Ramsauer-Townsend (RT) minimum and a virtual state. Our results indicate that negative differential conductivity would occur in a gas composed of Sn(CH3)4. On the other hand, this effect would be suppressed in a gas of Ga(CH3)3 due to an overlap between the position of the RT minimum and the shape resonance in the momentum-transfer cross section.

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Section: Introductionmentioning

confidence: 99%

Elastic cross section data for precursor molecules used in low-temperature plasmas: Sn(CH₃)₄ and Ga(CH₃)₃

Randi,

Moreira,

Bettega

2024

Plasma Sources Sci. Technol.

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Temperature-dependent power-law analysis of capacitance-voltage for GaN-based pn junction

Wang

Liu

et al. 2018

Journal of Applied Physics

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Capacitance-voltage (C-V) measurement is an effective method that has been widely used to study the electronic characteristics of the pn junction. In this paper, the C-V measurement is used to study the effect of the temperature on the structural type of the GaN-based pn junction. The C−2-V and C−3-V curves, combined with power-law index k, are used to determine the structural type of the GaN-based pn junction when the temperature is set at 25 °C, −50 °C, −100 °C, −150 °C, and −195 °C. Our experimental results show that the C−2-V curve is a clear linear relation, and the index k is 0.5 when the temperature is set at 25 °C and −50 °C. This shows an abrupt junction when the temperature ranges from 25 °C to −50 °C. When the temperature is dropped to −100 °C, the structural type of the pn junction begins to change and the index k becomes 0.45. When the temperature is decreased further to T = −150 °C and −195 °C, the index k becomes 0.30 and 0.28, respectively, corresponding to a non-abrupt and non-linear junction. Possible explanations of this phenomenon are: the low-temperature carrier freeze-out effect and the localized space charge region that is produced by crystal defects and interface states. The enhancement of the inhomogeneous and localized space charge region further affects the structural type of the pn junction in a low temperature environment.

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Hydrogen dissociation in the deposition of GaN films with ECR-PECVD process

Cited by 2 publications

References 16 publications

Elastic cross section data for precursor molecules used in low-temperature plasmas: Sn(CH₃)₄ and Ga(CH₃)₃

Elastic cross section data for precursor molecules used in low-temperature plasmas: Sn(CH₃)₄ and Ga(CH₃)₃

Temperature-dependent power-law analysis of capacitance-voltage for GaN-based pn junction

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Hydrogen dissociation in the deposition of GaN films with ECR-PECVD process

Cited by 2 publications

References 16 publications

Elastic cross section data for precursor molecules used in low-temperature plasmas: Sn(CH3)4 and Ga(CH3)3

Elastic cross section data for precursor molecules used in low-temperature plasmas: Sn(CH3)4 and Ga(CH3)3

Temperature-dependent power-law analysis of capacitance-voltage for GaN-based pn junction

Contact Info

Product

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Elastic cross section data for precursor molecules used in low-temperature plasmas: Sn(CH₃)₄ and Ga(CH₃)₃

Elastic cross section data for precursor molecules used in low-temperature plasmas: Sn(CH₃)₄ and Ga(CH₃)₃