Hydrogen dissociation on high-temperature tungsten

Catalytic Decomposition of H2O(D2O) on a Heated Ir Filament to Produce O and OH(OD) Radicals

“…In this technique, radical species are produced from material gases on heated metal surfaces without co-producing ionic or metastable excited species. In order to make clear the decomposition and ejection mechanisms, many studies have been carried out to identify the radical species produced [3][4][5][6][7][8][9][10][11][12][13][14][15][16]. Although it has been rather difficult to produce oxidizing radicals, we have recently shown that atomic oxygen can be produced efficiently by the catalytic decomposition of O 2 , NO, N 2 O, and NO 2 on a heated Ir filament [7,8].…”

Interaction of hydrogen with InN thin films elaborated on InP(100)

“…The H 2 dissociation probability on high temperature tungsten has been found to be 0.4 at 3000 K [10]. Moreover, it has been also found to be independent of the H 2 pressure (for p < 0.13 mbar, but such independence might continue well at the higher p, according to [10]). After exposure the InN/ InP(1 0 0) samples were transferred under UHV to the XPS chamber for subsequent surface analyses.…”

“…Only $10% of the hydrogen molecules were estimated to dissociate into atomic hydrogen under the experimental conditions used [10]. The H 2 dissociation probability on high temperature tungsten has been found to be 0.4 at 3000 K [10]. Moreover, it has been also found to be independent of the H 2 pressure (for p < 0.13 mbar, but such independence might continue well at the higher p, according to [10]).…”

“…The total exposure of H 2 considered was 2.83 · 10 9 L. It is important to note that the hydrogen dosage reported in Langmuirs by other authors refers to the total amount of gas introduced into the chamber, and not to the H dosage, which (depending on the experimental set-up) can be a very small fraction of the total gas dosage. Only $10% of the hydrogen molecules were estimated to dissociate into atomic hydrogen under the experimental conditions used [10]. The H 2 dissociation probability on high temperature tungsten has been found to be 0.4 at 3000 K [10].…”

Understanding electrically active interface formation on wide bandgap semiconductors through molecular beam epitaxy using Fe₃O₄ for spintronics as a base case

“…In general, it is assumed that the following key mechanisms to play a role. First, the H2 molecules are cracked at the hot surface into reactive atomic hydrogen, temperature ranging from 1400 to 1700 °C [79]. Sufficient thermal energy needed to be supplied to dissociate the H2 molecules, is +436.0 kJ/ mol These atoms will preferentially attach to Si atoms and subsequently substoichiometric SiH2 and SiH3 molecules form.…”