Hydrogen effect on nanostructural features of nanocrystalline silicon thin films deposited at 200°C by PECVD

Structural Properties Of Si:H Thin Film Grown By Vhf- Pecvd

“…Therefore, the morphology study from Table 1 shown that 200 MHz has rougher surface and larger grain size compare to 160 MHz. This eventually in agreement with other studies related with crystallinity, surface roughness and the grain size (Altmannshofer et al, 2018;Mossad & Kobayashi, 2014). However, rougher surface for 100 MHz may due to its amorphous state.…”

Investigation of p-type nanocrystalline silicon emitters for silicon heterojunction solar cells

“…This result verifies the view of Bakr et al [28] that the increase in band gap of ncSi:H films is due to the increase in crystallinity of the films. Similar results were also observed by other groups [16,20,29]. …”

“…Meanwhile, sufficient flux density of atomic hydrogen realizes a full surface coverage by bonded hydrogen, which allows the precursors (especially SiH 3 radicals) having larger surface diffusion length to seek energetically favorable sites which is the requisite condition for the nanocrystallites nuclei formation. These two events occurring are favorable to enhance the crystallinity of the deposited films [14][15][16].…”