Hydrogen effects at sputtered Tb-doped AlNxOy:H / c-Si(p) interfaces: A transient surface photovoltage spectroscopy study

Dulanto, J.; Fengler, Steffen; Sevillano-Bendezú, M A; Grieseler, Rolf; Guerra, Jorge Andrés; Töfflinger, Jan Amaru; Dittrich, Th.

doi:10.1016/j.tsf.2022.139474

Cited by 2 publications

(1 citation statement)

References 36 publications

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“…To investigate the conduction mechanism in AlB10 and facilitate the development of filmbased devices with an Al-AlB10-nSi structure, the current-voltage characteristics (I-V curves) were examined [10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25].…”

Section: The Methodology and Experimental Resultsmentioning

confidence: 99%

Technology of production and photoelectric characteristics of AlB₁₀ heterojunctions based on silicon

Sultanov,

Mirzajonov,

Yusupov

2023

E3S Web of Conf.

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Currently, the usage of electronic devices with diverse applications is prevalent in numerous commercial, industrial, electrical, and military sectors. The development of new semiconductors is essential for the advancement of highly sensitive, fast-responding, multifunctional, and high-precision devices and installations. Thin films based on semiconductor monocrystalline substrates are being obtained by scientists in leading research centers worldwide. Production technologies are being improved, optimal conditions are being determined, and the structural and unique physical properties of the obtained thin films are being studied. Additionally, research is being conducted to broaden the light absorption spectra of gas, temperature, and pressure-sensitive heterostructures. In this work, the results of a low-temperature technology development for obtaining films of refractory materials based on the presence of the eutectic state in boron-metal oxide systems are presented. The electro-physical properties of the obtained AlB10 films are investigated over a wide temperature range. The discussion revolves around the development of the technology for manufacturing metal-dielectric-metal (MDM) structures based on AlB10. The results of investigating the volt-ampere characteristics (VAC) of Ni-AlB10-Ni and Al-AlB10-n-Si structures are presented. The method employed for obtaining AlB10 films involves thermal evaporation of a B+Al2O3 mixture in a vacuum at a temperature of 1350-1400°C.

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Section: The Methodology and Experimental Resultsmentioning

confidence: 99%

Technology of production and photoelectric characteristics of AlB₁₀ heterojunctions based on silicon

Sultanov,

Mirzajonov,

Yusupov

2023

E3S Web of Conf.

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Advancements in Zinc Oxide (ZnO) thin films for photonic and optoelectronic applications: A focus on doping and annealing processes

Mirzajonov,

Sulaymonov,

Rakhmonov

et al. 2024

E3S Web of Conf.

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This study focuses on the potential of Zinc oxide (ZnO) as a versatile material for photonic and optoelectronic applications, owing to its direct wide bandgap (Eg ≈ 3.175 eV) and significant excitonic energy. ZnO, both in pure and doped forms, exhibits promise in various domains, including solar cells, photoelectrochemical cells, thin film transistors, gas sensors, and nanogenerators. The manuscript delves into the methodologies for producing ZnO:B films, including reactive evaporation, evaporation from two sources, and flash evaporation, each addressing the challenges of achieving the desired film composition and structure. The investigation reveals that the optimized ZnO:B films possess crystalline phases with hexagonal lattice structures, demonstrating significant enhancements in electrical conductivity upon specific annealing treatments. The research underscores the impact of doping and microstructure modifications on the optoelectronic properties of ZnO films, contributing to advancements in semiconductor-based thin films and powders.

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Hydrogen effects at sputtered Tb-doped AlNxOy:H / c-Si(p) interfaces: A transient surface photovoltage spectroscopy study

Cited by 2 publications

References 36 publications

Technology of production and photoelectric characteristics of AlB₁₀ heterojunctions based on silicon

Technology of production and photoelectric characteristics of AlB₁₀ heterojunctions based on silicon

Advancements in Zinc Oxide (ZnO) thin films for photonic and optoelectronic applications: A focus on doping and annealing processes

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Hydrogen effects at sputtered Tb-doped AlNxOy:H / c-Si(p) interfaces: A transient surface photovoltage spectroscopy study

Cited by 2 publications

References 36 publications

Technology of production and photoelectric characteristics of AlB10 heterojunctions based on silicon

Technology of production and photoelectric characteristics of AlB10 heterojunctions based on silicon

Advancements in Zinc Oxide (ZnO) thin films for photonic and optoelectronic applications: A focus on doping and annealing processes

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Technology of production and photoelectric characteristics of AlB₁₀ heterojunctions based on silicon

Technology of production and photoelectric characteristics of AlB₁₀ heterojunctions based on silicon