Technology of production and photoelectric characteristics of AlB₁₀ heterojunctions based on silicon

Abstract

Currently, the usage of electronic devices with diverse applications is prevalent in numerous commercial, industrial, electrical, and military sectors. The development of new semiconductors is essential for the advancement of highly sensitive, fast-responding, multifunctional, and high-precision devices and installations. Thin films based on semiconductor monocrystalline substrates are being obtained by scientists in leading research centers worldwide. Production technologies are being improved, optimal conditions are being determined, and the structural and unique physical properties of the obtained thin films are being studied. Additionally, research is being conducted to broaden the light absorption spectra of gas, temperature, and pressure-sensitive heterostructures. In this work, the results of a low-temperature technology development for obtaining films of refractory materials based on the presence of the eutectic state in boron-metal oxide systems are presented. The electro-physical properties of the obtained AlB10 films are investigated over a wide temperature range. The discussion revolves around the development of the technology for manufacturing metal-dielectric-metal (MDM) structures based on AlB10. The results of investigating the volt-ampere characteristics (VAC) of Ni-AlB10-Ni and Al-AlB10-n-Si structures are presented. The method employed for obtaining AlB10 films involves thermal evaporation of a B+Al2O3 mixture in a vacuum at a temperature of 1350-1400°C.