Hydrogen Etching Influence on 4H-SiC Homo-Epitaxial Layer for High Power Device

Anzalone, Ruggero; Piluso, Nicolò; Salanitri, Marco; Lorenti, Simona; Arena, Giuseppe; Coffa, S.

doi:10.4028/www.scientific.net/msf.897.71

Cited by 11 publications

(4 citation statements)

References 9 publications

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“…It has been believed that this can be removed by performing a small amount of hydrogen etching prior to epitaxial growth in a CVD system. However, there are still difficulties in completely suppressing defect generation during epitaxial growth by controlling hydrogen etching [5,6]. It is expected to become more challenging to maintain machining uniformity as the wafer diameter increases.…”

Section: Introductionmentioning

confidence: 99%

4H-SiC Full Wafer Mapping Image of CMP-Finished Sub-Surface Damage by Laser Light Scattering

Dojima,

Dansako,

Maki

et al. 2023

SSP

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Developing an observation method for distributing sub-surface damage (SSD) on large-diameter 4H-SiC bulk wafers formed by mechanical processing can significantly improve the epitaxial and bulk growth processes. This study used a novel laser light scattering (LLS) technique to observe SSD distribution on a 6-inch 4H-SiC (0001) wafer. As a result, scattering intensity distributions similar to the grinding and lap-polishing traces and the shape of the jig used to hold the wafer during polishing were observed on the CMP-finished SiC wafer surface. Since the surface topography of the area was flat by a laser microscopy observation, it is assumed that this is the SSD. This result suggests that LLS can be a wafer inspection method that can observe SSD distribution. In addition, wafer inspection using LLS has demonstrated that it is possible to observe scratches, particles, and macrostep bunching. This method is anticipated to allow further optimization of the mechanical processing and thermal etching process prior to CVD epitaxial growth.

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Section: Introductionmentioning

confidence: 99%

4H-SiC Full Wafer Mapping Image of CMP-Finished Sub-Surface Damage by Laser Light Scattering

Dojima,

Dansako,

Maki

et al. 2023

SSP

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“…1, A-B). Ideally, steps on the surface need to be cleanly delineated prior to epitaxy and surface damage needs to be removed by etching [8][9].…”

Section: Introductionmentioning

confidence: 99%

Study of Defects in 4H-SiC Epitaxy at Various Buffer Layer Growth Conditions

Rana¹,

Wu²,

Chung³

et al. 2023

DDF

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Buffer layer optimization is a critical technique to mitigate defect propagation from substrate to epilayer, reduce stress, and prevent generation of ingrown defects. In the present study, the impact of dopant transition from substrate to the buffer layer on various epilayer defects was investigated. It was found that a ramped transition of the dopant concentration from substrate to buffer layer is beneficial for reduction of basal plane dislocations in the epilayer compared to an abrupt doping transition. This reduction of defects can be attributed to reduced stress at the substrate-to-buffer layer transition. Tests on buffer layer growth rates also revealed that higher growth rates reduce BPDs (basal plane dislocations) in the epilayers. We believe that BPD conversion in epilayers grown at higher growth rates is energetically more favorable than the conversion at slower growth rates resulting in the observed reduced BPDs at higher growth rates.

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“…Было показано, что таким образом можно обрабатывать поверхность различных политипов SiC [6]. В то же время отмечалось, что длительное травление в водороде поверхности SiC подложки приводит к увеличению плотности структурных дефектов в эпитаксиальном слое, выращенном на основе данной подложки [7].…”

Section: Introductionunclassified

Исследование влияния водородного травления поверхности SiC на последующий процесс формирования пленок графена

Лебедев¹,

Barash²,

Eliseyev³

et al. 2019

Журнал Технической Физики

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The effect of temperature and duration of the 4H-SiC (0001) surface etching in hydrogen on the structural perfection of graphene films grown by the thermal destruction method was studied. Several technological regimes have been defined that allow etching of the substrate without changing the stoichiometric composition of the surface. It has been demonstrated that pre-growth etching in hydrogen at T = 1600 ° C for 1 min. allows one to obtain more uniform and structurally perfect graphene than etching at T = 1300 ° C for 30 minutes.

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Hydrogen Etching Influence on 4H-SiC Homo-Epitaxial Layer for High Power Device

Cited by 11 publications

References 9 publications

4H-SiC Full Wafer Mapping Image of CMP-Finished Sub-Surface Damage by Laser Light Scattering

4H-SiC Full Wafer Mapping Image of CMP-Finished Sub-Surface Damage by Laser Light Scattering

Study of Defects in 4H-SiC Epitaxy at Various Buffer Layer Growth Conditions

Исследование влияния водородного травления поверхности SiC на последующий процесс формирования пленок графена

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