Hydrogen Impacts of PEALD InGaZnO TFTs Using SiO<sub>x</sub> Gate Insulators Deposited by PECVD and PEALD

Jeong, Seok-Goo; Jeong, Hyun‐Jun; Choi, Wan-Ho; Kim, KyoungRok; Park, Jin‐Seong

doi:10.1109/ted.2020.3017145

Cited by 40 publications

(25 citation statements)

References 31 publications

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“…So far, many articles on sputtering-deposited AZO films and correspondingly application examples have been reported [ 11 , 12 , 13 , 14 ]. However, the sputtering process suffers from the distinct disadvantages of high-vacuum background pressure, surface damage of pre-deposited films, worse repeatability, and film composition limitations [ 15 , 16 ]. Therefore, it is important to develop novel processes for depositing transparent conductive AZO films.…”

Section: Introductionmentioning

confidence: 99%

Investigation on Transparent, Conductive ZnO:Al Films Deposited by Atomic Layer Deposition Process

et al. 2022

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Transparent electrodes are a core component for transparent electron devices, photoelectric devices, and advanced displays. In this work, we fabricate fully-transparent, highly-conductive Al-doped ZnO (AZO) films using an atomic layer deposition (ALD) system method of repeatedly stacking ZnO and Al2O3 layers. The influences of Al cycle ratio (0, 2, 3, and 4%) on optical property, conductivity, crystallinity, surface morphology, and material components of the AZO films are examined, and current conduction mechanisms of the AZO films are analyzed. We found that Al doping increases electron concentration and optical bandgap width, allowing the AZO films to excellently combine low resistivity with high transmittance. Besides, Al doping induces preferred-growth-orientation transition from (002) to (100), which improves surface property and enhances current conduction across the AZO films. Interestingly, the AZO films with an Al cycle ratio of 3% show preferable film properties. Transparent ZnO thin film transistors (TFTs) with AZO electrodes are fabricated, and the ZnO TFTs exhibit superior transparency and high performance. This work accelerates the practical application of the ALD process in fabricating transparent electrodes.

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Section: Introductionmentioning

confidence: 99%

Investigation on Transparent, Conductive ZnO:Al Films Deposited by Atomic Layer Deposition Process

et al. 2022

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“…Positive‐bias temperature stress (PBTS) instabilities of both devices were examined under a gate bias stress of +30 V and a chuck temperature of 60°C (Figure 10D). Devices with plasma‐enhanced CVD‐derived SiO 2 suffered from an abnormal V TH shift of −1.25 V, which can be attributed to the migration of hydrogen impurities in SiO 2 film as shown by the results of Fourier‐transform infrared and elastic recoil detection analysis in Figure 10E,F, respectively 79,80 . In contrast, a device with a plasma‐enhanced ALD‐derived SiO 2 dielectric exhibited a normal V TH shift of +2.87 V under identical PBTS conditions.…”

Section: Ald‐derived N‐channel Oxide Tftsmentioning

confidence: 95%

“…Industrial standard SiO 2 film for IGZO TFTs is deposited by plasma‐enhanced chemical vapor deposition (CVD) at temperatures above 300°C because of the excellent leakage characteristics produced by a wide E g of 8 to 9 eV and its conformality and patterning capability. To fabricate oxide TFTs on non‐planar or 3D scheme structure, SiO 2 gate dielectric films by ALD have been investigated 77–79 . Although CVD offers acceptable step coverage on a planar substrate, its conformality on nano‐trench or step structures is limited.…”

Section: Ald‐derived N‐channel Oxide Tftsmentioning

confidence: 99%

“…Although CVD offers acceptable step coverage on a planar substrate, its conformality on nano‐trench or step structures is limited. Jeong et al 79 compared the physical and chemical properties of SiO 2 films using plasma‐enhanced CVD and ALD routes. Lower leakage rates were achieved for the IGZO TFTs with a plasma‐enhanced ALD‐derived SiO 2 gate insulator compared with that from plasma‐enhanced CVD‐derived SiO 2 , as shown Figure 10A.…”

Section: Ald‐derived N‐channel Oxide Tftsmentioning

confidence: 99%

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Recent progress and perspectives on atomic‐layer‐deposited semiconducting oxides for transistor applications

2022

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This paper reviews recent developments in the fabrication of high‐performance n‐channel metal‐oxide thin‐film transistors (TFTs) through atomic‐layer deposition (ALD), which are now attracting attention due to their potential for use in augmented and virtual reality, ultra‐high‐definition organic light‐emitting diodes, and flexible electronics. Recent trends in research on TFT backplanes for display applications are provided in the introduction. In the main section, ALD‐derived n‐type oxides serving as active layers are classified into binary, ternary, and quaternary systems, and recent developments and critical issues in n‐channel oxide TFTs are described. The performance of n‐channel oxide TFTs can be boosted through advanced architectures, including stacked heterojunction channels using two‐dimensional electron gases, and the introduction of high‐k dielectric such as ALD‐derived hafnium oxide, which is highlighted in this review. Finally, progress in p‐channel ALD‐derived oxide TFTs is briefly addressed with respect to complementary metal–oxide‐semiconductor applications.

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“…Moreover, PECVD is one of the main processes used in the nanofabrication of electron devices in order to deposit high quality thin film semiconductors (Jeong et al, 2020). Generally, in nanofabrictation, PECVD of a thin film immediately follows the doping of silicon compound film pre-grown on Si wafer with either Arsenic, phosphorous, or boron via Ion Implantation which aims to tune the conductivity, relative to a particular technology application of the semiconductor industry (Skorupa et al, 1987;Yokota et al, 1994).…”

Section: Pecvd Deposition Technique Backgroundmentioning

confidence: 99%

Advanced Development of Sustainable PECVD Semitransparent Photovoltaics: A Review

2021

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Energy is the driving force behind the upcoming industrial revolution, characterized by connected devices and objects that will be perpetually supplied with energy. Moreover, the global massive energy consumption increase requires appropriate measures, such as the development of novel and improved renewable energy technologies for connecting remote areas to the grid. Considering the current prominent market share of unsustainable energy generation sources, inexhaustible and clean solar energy resources offer tremendous opportunities that, if optimally exploited, might considerably help to lessen the ever-growing pressure experienced on the grid nowadays. The R&D drive to develop and produce socio-economically viable solar cell technologies is currently realigning itself to manufacture advanced thin films deposition techniques for Photovoltaic solar cells. Typically, the quest for the wide space needed to deploy PV systems has driven scientists to design multifunctional nanostructured materials for semitransparent solar cells (STSCs) technologies that can fit in available household environmental and architectural spaces. Specifically, Plasma Enhanced Chemical Vapor Deposition (PECVD) technique demonstrated the ability to produce highly transparent coatings with the desired charge carrier mobility. The aim of the present article is to review the latest semi-transparent PV technologies that were impactful during the past decade with special emphasis on PECVD-related technologies. We finally draw some key recommendations for further technological improvements and sustainability.

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Hydrogen Impacts of PEALD InGaZnO TFTs Using SiO_x Gate Insulators Deposited by PECVD and PEALD

Cited by 40 publications

References 31 publications

Investigation on Transparent, Conductive ZnO:Al Films Deposited by Atomic Layer Deposition Process

Investigation on Transparent, Conductive ZnO:Al Films Deposited by Atomic Layer Deposition Process

Recent progress and perspectives on atomic‐layer‐deposited semiconducting oxides for transistor applications

Advanced Development of Sustainable PECVD Semitransparent Photovoltaics: A Review

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Hydrogen Impacts of PEALD InGaZnO TFTs Using SiOx Gate Insulators Deposited by PECVD and PEALD

Cited by 40 publications

References 31 publications

Investigation on Transparent, Conductive ZnO:Al Films Deposited by Atomic Layer Deposition Process

Investigation on Transparent, Conductive ZnO:Al Films Deposited by Atomic Layer Deposition Process

Recent progress and perspectives on atomic‐layer‐deposited semiconducting oxides for transistor applications

Advanced Development of Sustainable PECVD Semitransparent Photovoltaics: A Review

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Hydrogen Impacts of PEALD InGaZnO TFTs Using SiO_x Gate Insulators Deposited by PECVD and PEALD