Hydrogen Implantation Damage in Polycrystalline Silicon Thin Film Transistors Caused by Ion Doping

Articles you may be interested inMulti-cusp ion source for doping process of flat panel display manufacturinga) Rev. Sci. Instrum. 85, 02C312 (2014); Fully sealed carbon nanotube flat-panel light source and its application as thin film transistor-liquid-crystal display backlight [This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to ] IP: 147.143.2.5 On: Sun, 21 Dec 2014 00:50:24 Technologies for processing and communicating information including image information have matured with the progress of large scale integrated circuit ͑LSI͒ and broadband communication technologies. Engineers engaged in LSI technology are exerting themselves to increase the speed and advance mass processing by scaling down the technology node to 65 nm or further. The wideband communication technology increases the mass of information in sending and receiving information. Image sensing technologies have also matured with the progress of charge coupled device ͑CCD͒ and complementary metal-oxide-semiconductor ͑CMOS͒ image sensor technologies. Now, some mobile phones with built in cameras are mounted with 3.2 megapixel image sensors; some digital still cameras are mounted with 10 megapixel image sensors. Meanwhile, the output/expression technologies have not matured sufficiently for displaying high definition images a͒ Electronic

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Hydrogen Implantation Damage in Polycrystalline Silicon Thin Film Transistors Caused by Ion Doping

Cited by 6 publications

References 2 publications

Method for improving electrical property of polysilicon film used to light absorption layer of photodetector

Method for improving electrical property of polysilicon film used to light absorption layer of photodetector

Flat panel display – Impurity doping technology for flat panel displays

Flat panel displays for ubiquitous product applications and related impurity doping technologies

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