Hydrogen implantation-induced defects in bulk Si studied by Raman spectrometry

Villeneuve, C.; Paillard, Vincent; Bourdelle, K.K.; Cayrefourcq, I.; Boussagol, Alice; Kennard, M.

doi:10.1016/j.nimb.2006.10.027

Cited by 9 publications

(7 citation statements)

References 13 publications

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“…This value agrees well with the value of 4 cm À1 that has been reported for single crystalline Si at room temperature [14,15]. Thus, the decrease in FWHM is a clear indication of improvement in crystalline quality that may have been caused by temperatureinduced defect reduction, as occurs normally in bulk Si [16].…”

Section: Resultssupporting

confidence: 91%

“…This implies that the crystalline quality of the thin films is equal to that of crystalline Si, which allows us to conclude that the long annealing time and higher Ni thickness lead to better-quality films. This improvement in crystalline quality may be correlated to defect reduction or to defect-free crystallization rather than to the various other mechanisms suggested by others [12,13,16].…”

Section: Resultsmentioning

confidence: 67%

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Raman scattering analysis of the residual stress in metal-induced crystallized amorphous silicon thin films using nickel

Nguyen

Jung

et al. 2009

Applied Surface Science

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Section: Resultssupporting

confidence: 91%

Section: Resultsmentioning

confidence: 67%

Raman scattering analysis of the residual stress in metal-induced crystallized amorphous silicon thin films using nickel

Nguyen

Jung

et al. 2009

Applied Surface Science

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“…3,4 Research works were mostly dedicated to the formation of porous materials for light emitters 5 and nanobubbles to getter the transition metals. 11 The results were in a good agreement with the implant damage simulations performed with the binary collision code IMSIL. 7,8 The DSB substrates allow ͑011͒ and ͑001͒ Si orientations on the same wafer.…”

Section: Introductionsupporting

confidence: 78%

“…7,8 The DSB substrates allow ͑011͒ and ͑001͒ Si orientations on the same wafer. 11 It was remarkably close to the average strain measured by the sample curvature technique. A ͑011͒ silicon layer is better suited for hole conduction, while "standard" ͑001͒-oriented substrates are preferred for electron conduction.…”

Section: Introductionsupporting

confidence: 77%

Raman spectroscopy study of damage and strain in (001) and (011) Si induced by hydrogen or helium implantation

Villeneuve¹,

Bourdelle

Paillard

et al. 2007

Journal of Applied Physics

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We use Raman spectrometry to investigate lattice disorder and strain induced by hydrogen or helium implantation in ͑001͒ and ͑011͒ Si. The phonon peak intensities and the spatial correlation model are used to estimate the amount of damage affecting the phonon coherence length. The redshift due to reduced coherence length is taken into account to fit the model to the experimental spectra. This allows us to correctly estimate a blueshift attributed to a compressive in-plane strain. We observe that the amount of strain increases linearly with the implant dose. For H implants the dependence of strain on crystallographic orientation was discovered. This effect is attributed to the anisotropic morphology of the H-induced extended defects: two-dimensional platelets with preferred orientations versus spherical nanobubbles formed after He implants. Raman results are correlated with the implant damage simulations and compared with the data obtained by other characterization techniques.

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“…The increase in D R with the increase of Au catalyst size indeed implies an improvement in SiNNs crystallinity. This enhanced crystallinity of the samples is closely associated with reduction of FWHM of the TO phonon mode [51]. The FWHM of the c-Si peak is found to gradually decline (Table 1) from $38 to 14 cm À1 with the increase in Au catalyst size.…”

Section: Resultsmentioning

confidence: 70%