Hydrogen in oxide semiconductors

McCluskey, M. D.; Tarun, Marianne C.; Teklemichael, Samuel T.

doi:10.1557/jmr.2012.137

Cited by 82 publications

(74 citation statements)

References 110 publications

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“…This is concluded from the different annealing behavior of the SPV samples with and without an a-Si:H (i) buffer (not shown) and from the fact that our ITO and aluminum doped zinc oxide (AZO) films (also high band gap n-type metal oxide) are also strongly modified by the hydrogen from the a-Si:H [33,34]. That hydrogen can play a vital role for such material systems is also expected from literature [35].…”

Section: J-v and Suns-v Oc Parametersmentioning

confidence: 53%

Molybdenum and tungsten oxide: High work function wide band gap contact materials for hole selective contacts of silicon solar cells

Bivour

Temmler

Steinkemper

et al. 2015

Solar Energy Materials and Solar Cells

296

220

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Section: J-v and Suns-v Oc Parametersmentioning

confidence: 53%

Molybdenum and tungsten oxide: High work function wide band gap contact materials for hole selective contacts of silicon solar cells

Bivour

Temmler

Steinkemper

et al. 2015

Solar Energy Materials and Solar Cells

296

220

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“…In recent studies, however, hydrogen impurities have been found to be the dominant shallow donors in several important cases. [5][6][7][8][9][10] In 2 O 3 , a prototypical transparent conducting oxide, has the cubic bixbyite structure with a conventional unit cell that contains 80 atoms. 11 The oxygen sites are all equivalent.…”

Section: Introductionmentioning

confidence: 99%

Hydrogen centers and the conductivity ofIn2O3single crystals

et al. 2015

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“…It is usually assumed that information obtained from μSR can be transferred with appropriate modifications to H. However, overlapping experiments to support this assumption are scarce. A particularly relevant case is the doping character of H in semiconductors and oxides [3][4][5][6], where practically all calculations refer to the electronic structure of H whereas most experimental information comes from μSR [7][8][9][10][11][12][13]. Overlapping data exist only for ZnO where proton-ENDOR (electron-nuclear double resonance) data [14] can be compared directly with μSR results [15][16][17][18].…”

mentioning

confidence: 99%

“…The gradual population of the excited state with increasing temperature and rapid fluctuations between neighboring bonding sites lead to the collapse of the hyperfine interaction. These site changes occur within the same oxygen channel and on a single TiO 6 sublattice. The present data indicate an energy difference of about 0.9(1) meV between the ground state and excited state.…”

mentioning

confidence: 99%

Muonium donor in rutileTiO2and comparison with hydrogen

et al. 2015

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Muonium, a positive muon and an electron, is often used as an experimentally accessible substitute for hydrogen in materials research. In semiconductors and insulators, a large amount of information on the hydrogen behavior is deduced from this analogy; however, it is seldom demonstrated that this procedure is justified. We show here, via a comparison of the hyperfine interactions, that in TiO 2 muonium and hydrogen form the same configuration with the same basic electronic structure. A detailed description of the bonding characteristics of the muon to the Ti 3+ polaron is presented. The special role of muon motion within the so-called oxygen channel in the rutile structure, which occurs at a lower temperature than for hydrogen, is emphasized. Muonium (Mu) is a pseudoisotope of hydrogen in which the proton is replaced by a positive muon (μ + ), with a factor of 9 lighter mass. Muon spin spectroscopy (μSR) uses muons implanted with 100% spin polarization and offers a very sensitive method to study the properties of this isolated pseudohydrogen in solids [1,2]. It is usually assumed that information obtained from μSR can be transferred with appropriate modifications to H. However, overlapping experiments to support this assumption are scarce. A particularly relevant case is the doping character of H in semiconductors and oxides [3][4][5][6], where practically all calculations refer to the electronic structure of H whereas most experimental information comes from μSR [7][8][9][10][11][12][13]. Overlapping data exist only for ZnO where proton-ENDOR (electron-nuclear double resonance) data [14] can be compared directly with μSR results [15][16][17][18]. A number of properties (e.g., ionization energy) are indeed similar for the two species. However, the measured hyperfine interaction (hfi), scaled with the magnetic moments, differs by almost a factor of 10. This raised the question of whether the same configuration is measured, or if the H center may involve an additional defect [19,20].Here, we report a case where the same configuration can be established for H and Mu. We compare the hfi of the μSR experiment with the proton-ENDOR result, both for rutile TiO 2 . The H center in TiO 2 was extensively studied by Brant et al.[21] using electron paramagnetic resonance (EPR) and ENDOR, who found that the electron is located at the Ti ion reducing it from Ti 4+ to Ti 3+ . H is bound to one of the six O atoms surrounding Ti and the magnetic interaction between the proton and the electron is mainly dipolar. This specific hfi permits a sensitive comparison of the two experiments. We have observed a dramatic change of the μSR spectra with increasing temperature and a complete disappearance of the hyperfine splitting at 10 K. We show that this is due to rapid jumps of the muon between neighboring bonding positions to O atoms around Ti 3+ . The very strong angle dependence of the dipolar interaction and the averaging over values in different * ruivilao@fis.uc.pt positions lead to the reduction and final disappearance of the hfi...

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Hydrogen in oxide semiconductors

Abstract: Abstract

Cited by 82 publications

References 110 publications

Molybdenum and tungsten oxide: High work function wide band gap contact materials for hole selective contacts of silicon solar cells

Molybdenum and tungsten oxide: High work function wide band gap contact materials for hole selective contacts of silicon solar cells

Hydrogen centers and the conductivity ofIn2O3single crystals

Muonium donor in rutileTiO2and comparison with hydrogen

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