Hydrogen-induced piezoelectric effects in InP HEMT's

Blanchard, R.R.; Alamo, J.A. del; Adams, Stephen B.; Chao, P.C.; Cornet, A.

doi:10.1109/55.778153

Cited by 30 publications

(17 citation statements)

References 11 publications

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“…showed no or orientation dependence, in contrast to the behavior observed on the same devices [2]. The control devices annealed in N showed no Fig.…”

Section: Resultsmentioning

confidence: 63%

“…To produce a 0.9 V increase in must increase by nearly 15 meV [9]. This is inconsistent with the negative threshold voltage shift observed on the same devices following H exposure [2]. It is also inconsistent with the fact that was found to recover with further N annealing while did not.…”

Section: Resultsmentioning

confidence: 80%

“…The behavior of in these devices as a result of similar hydrogen exposure and follow-on recovery anneals has been described in [2].…”

Section: Methodsmentioning

confidence: 99%

“…Over time, hydrogen causes changes in device characteristics that can ultimately lead to parametric module failures. Compared with more extensive studies of H degradation of GaAs MESFETs and PHEMTs [3]- [6], only limited data on the H sensitivity of InP HEMTs is available [1], [2], [5]. To our knowledge, a device-level solution to this problem has not been reported for either InP or GaAs technologies.…”

Section: Introductionmentioning

confidence: 99%

“…Previous work on the effects of H exposure has focused primarily on the changes in the device threshold voltage, , and transconductance, [2]- [6]. These device parameters are governed mainly by the physics in the intrinsic region of the device, which is the area directly beneath the gate.…”

Section: Introductionmentioning

confidence: 99%

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Hydrogen-induced changes in the breakdown voltage of InP HEMTs

Blanchard

Alamo

Calveras

2005

IEEE Trans. Device Mater. Relib.

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Abstract-In this work, electrical measurements show that the breakdown voltage, BV DG , of InP HEMTs increases following exposure to H 2 . This BV DG shift is nonrecoverable. The increase in BV DG is found to be due to a decrease in the carrier concentration in the extrinsic portion of the device. We provide evidence that H 2 reacts with the exposed InAlAs surface in the extrinsic region next to the gate, changing the underlying carrier concentration. Hall measurements of capped and uncapped HEMT samples show that the decrease in sheet carrier concentration can be attributed to a modification of the exposed InAlAs surface. Consistent with this, XPS experiments on uncapped heterostructures give evidence of As loss from the InAlAs surface upon exposure to hydrogen.

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“…showed no or orientation dependence, in contrast to the behavior observed on the same devices [2]. The control devices annealed in N showed no Fig.…”

Section: Resultsmentioning

confidence: 63%

Section: Resultsmentioning

confidence: 80%

“…The behavior of in these devices as a result of similar hydrogen exposure and follow-on recovery anneals has been described in [2].…”

Section: Methodsmentioning

confidence: 99%