Hydrogen On Semiconductor Surfaces

Schaefer, J. A.; Balster, Torsten; Polyakov, V. M.; Rossów, U.; Sloboshanin, S.; Starke, Ulrich; Tautz, F. Stefan

doi:10.1557/proc-513-3

Cited by 3 publications

(1 citation statement)

References 54 publications

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“…While H bonded in other (SiH2, (SiH2)n) configurations on c-Si can show a wide variety of peak frequencies (from 620 cm-1 to as high as 675 cm-1) (14), for purely Si-H monohydride bonding only one wag mode frequency is observed. Hence, combining these observations with the present measurements, we assert that the IR frequency shift for the 'high dilution' film indicates the presence of crystallites contained within the amorphous matrix, with the large majority of the H bonded on these crystallite surfaces.…”

Section: Resultsmentioning

confidence: 99%

Structural Changes in a-Si:H Films Deposited on the Edge of Crystallinity

et al. 1999

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Using infrared, H evolution and x-ray diffraction (XRD), the structure of high H dilution, glow discharge deposited a-Si:H films ‘on the edge of crystallinity’ is examined. From the Si-H wag mode peak frequency and the XRD results, we postulate the existence of very small Si crystallites contained within the as-grown amorphous matrix, with the vast majority of the bonded H located on these crystallite surfaces. Upon annealing at ramp rates of 8-15°C/min, a H evolution peak at ~400°C appears, and film crystallization is observed at temperatures as low as 500°C, both of which are far below those observed for a-Si:H films grown without H dilution using similar rates. While the crystallite volume fraction is too small to be detected by XRD in the as-grown films, these crystallites enable the crystallization of the remainder of the amorphous matrix upon moderate annealing, thus explaining the existence of the low temperature H evolution peak.

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Section: Resultsmentioning

confidence: 99%