Self-assembled indium linear chains on the Si(111) surface are found to exhibit instability of the metallic phase and 1D charge density wave (CDW). The room-temperature metallic phase of these chains undergoes a temperature-induced, reversible transition into a semiconducting phase. The 1D CDW along the chains is observed directly in real space by scanning tunneling microscopy at low temperature. The Fermi contours of the metallic phase measured by angle-resolved photoemission exhibit a perfect nesting predicting precisely the CDW periodicity. [S0031-9007(99)09330-8]

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A quasianalytical modeling approach for graphene metal-oxide-semiconductor field-effect transistors (MOSFETs) with gapless large-area graphene channels is presented. The model allows the calculation of the I-V characteristics, the small-signal behavior, and the cutoff frequency of graphene MOSFETs. It applies a correct formulation of the density of states in large-area graphene to calculate the carrier-density-dependent quantum capacitance, a steady-state velocity-field characteristics with soft saturation to describe the carrier transport, and takes the source/drain series resistances into account. The modeled drain currents and transconductances show very good agreement with experimental data taken from the literature {Meric et al., [Nat. Nanotechnol. 3, 654 (2008)] and Kedzierski et al., [IEEE Electron Device Lett. 30, 745 (2009)]}. In particular, the model properly reproduces the peculiar saturation behavior of graphene MOSFETs with gapless channels.

We report direct angle-resolved photoemission measurements of the coupling between the symmetric stretch vibrational mode of adsorbed hydrogen and a surface band on W(110). This coupling is manifested by the surface band being split into two branches at a binding energy comparable to the vibrational mode energy, as confirmed by observation of a dramatic hydrogen/deuterium isotope effect. The electron-phonon coupling parameter lambda is found to be significantly larger than that for bulk W, and to be closely related to the degree of surface localization of the surface state wave function.

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